Neon Ion Beam Lithography (NIBL)

Neon Ion Beam Lithography (NIBL)

Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm[superscript 2...

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Bibliographic Details
Main Authors: Winston, Donald, Manfrinato, Vitor Riseti, Nicaise, Samuel M., Cheong, Lin Lee, Duan, Huigao, Ferranti, David, Marshman, Jeff, McVey, Shawn, Stern, Lewis, Notte, John, Berggren, Karl K.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Chemical Society (ACS) 2012
Online Access:http://hdl.handle.net/1721.1/74050
https://orcid.org/0000-0003-3329-9099
https://orcid.org/0000-0002-9129-4731
https://orcid.org/0000-0001-7453-9031
Description
Summary:Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm[superscript 2], 1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on beam-based lithography.

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