Neon Ion Beam Lithography (NIBL)
Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm[superscript 2...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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American Chemical Society (ACS)
2012
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| Online Access: | http://hdl.handle.net/1721.1/74050 https://orcid.org/0000-0003-3329-9099 https://orcid.org/0000-0002-9129-4731 https://orcid.org/0000-0001-7453-9031 |
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| author | Winston, Donald Manfrinato, Vitor Riseti Nicaise, Samuel M. Cheong, Lin Lee Duan, Huigao Ferranti, David Marshman, Jeff McVey, Shawn Stern, Lewis Notte, John Berggren, Karl K. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Winston, Donald Manfrinato, Vitor Riseti Nicaise, Samuel M. Cheong, Lin Lee Duan, Huigao Ferranti, David Marshman, Jeff McVey, Shawn Stern, Lewis Notte, John Berggren, Karl K. |
| author_sort | Winston, Donald |
| collection | MIT |
| description | Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm[superscript 2], 1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on beam-based lithography. |
| first_indexed | 2024-09-23T16:00:41Z |
| format | Article |
| id | mit-1721.1/74050 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T16:00:41Z |
| publishDate | 2012 |
| publisher | American Chemical Society (ACS) |
| record_format | dspace |
| spelling | mit-1721.1/740502022-09-29T17:40:15Z Neon Ion Beam Lithography (NIBL) Winston, Donald Manfrinato, Vitor Riseti Nicaise, Samuel M. Cheong, Lin Lee Duan, Huigao Ferranti, David Marshman, Jeff McVey, Shawn Stern, Lewis Notte, John Berggren, Karl K. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Winston, Donald Manfrinato, Vitor Riseti Nicaise, Samuel M. Cheong, Lin Lee Duan, Huigao Berggren, Karl K. Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm[superscript 2], 1000× more efficient than using 30 keV electrons, and resolution down to 7 nm half-pitch. This combination of resolution and exposure efficiency is expected to impact a wide array of fields that are dependent on beam-based lithography. United States. Dept. of Energy. Center for Excitonics (Award DE-SC0001088) 2012-10-17T18:36:22Z 2012-10-17T18:36:22Z 2011-09 2011-08 Article http://purl.org/eprint/type/JournalArticle 1530-6984 1530-6992 http://hdl.handle.net/1721.1/74050 Winston, Donald et al. “Neon Ion Beam Lithography (NIBL).” Nano Letters 11.10 (2011): 4343–4347. https://orcid.org/0000-0003-3329-9099 https://orcid.org/0000-0002-9129-4731 https://orcid.org/0000-0001-7453-9031 en_US http://dx.doi.org/10.1021/nl202447n Nano Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Chemical Society (ACS) MIT web domain |
| spellingShingle | Winston, Donald Manfrinato, Vitor Riseti Nicaise, Samuel M. Cheong, Lin Lee Duan, Huigao Ferranti, David Marshman, Jeff McVey, Shawn Stern, Lewis Notte, John Berggren, Karl K. Neon Ion Beam Lithography (NIBL) |
| title | Neon Ion Beam Lithography (NIBL) |
| title_full | Neon Ion Beam Lithography (NIBL) |
| title_fullStr | Neon Ion Beam Lithography (NIBL) |
| title_full_unstemmed | Neon Ion Beam Lithography (NIBL) |
| title_short | Neon Ion Beam Lithography (NIBL) |
| title_sort | neon ion beam lithography nibl |
| url | http://hdl.handle.net/1721.1/74050 https://orcid.org/0000-0003-3329-9099 https://orcid.org/0000-0002-9129-4731 https://orcid.org/0000-0001-7453-9031 |
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