Neon Ion Beam Lithography (NIBL)
Existing techniques for electron- and ion-beam lithography, routinely employed for nanoscale device fabrication and mask/mold prototyping, do not simultaneously achieve efficient (low fluence) exposure and high resolution. We report lithography using neon ions with fluence <1 ion/nm[superscript 2...
Main Authors: | Winston, Donald, Manfrinato, Vitor Riseti, Nicaise, Samuel M., Cheong, Lin Lee, Duan, Huigao, Ferranti, David, Marshman, Jeff, McVey, Shawn, Stern, Lewis, Notte, John, Berggren, Karl K. |
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Other Authors: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
Format: | Article |
Language: | en_US |
Published: |
American Chemical Society (ACS)
2012
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Online Access: | http://hdl.handle.net/1721.1/74050 https://orcid.org/0000-0003-3329-9099 https://orcid.org/0000-0002-9129-4731 https://orcid.org/0000-0001-7453-9031 |
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