FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics
Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is required to enable the highest performance devices...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2012
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| Online Access: | http://hdl.handle.net/1721.1/74123 |
| _version_ | 1826194889573924864 |
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| author | Vitale, Steven A. Wyatt, Peter W. Checka, Nisha Kedzierski, Jakub T. Keast, Craig L. |
| author2 | Lincoln Laboratory |
| author_facet | Lincoln Laboratory Vitale, Steven A. Wyatt, Peter W. Checka, Nisha Kedzierski, Jakub T. Keast, Craig L. |
| author_sort | Vitale, Steven A. |
| collection | MIT |
| description | Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is required to enable the highest performance devices possible while maintaining extremely low power consumption. Transistors optimized for subthreshold operation at 0.3 V may achieve a 97% reduction in switching energy compared to conventional transistors. The process technology described in this article takes advantage of the capacitance and performance benefits of thin-body silicon-on-insulator devices, combined with a workfunction engineered mid-gap metal gate. |
| first_indexed | 2024-09-23T10:03:46Z |
| format | Article |
| id | mit-1721.1/74123 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T10:03:46Z |
| publishDate | 2012 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/741232022-09-26T15:27:42Z FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics Vitale, Steven A. Wyatt, Peter W. Checka, Nisha Kedzierski, Jakub T. Keast, Craig L. Lincoln Laboratory Vitale, Steven A. Wyatt, Peter W. Checka, Nisha Kedzierski, Jakub T. Keast, Craig L. Ultralow-power electronics will expand the technological capability of handheld and wireless devices by dramatically improving battery life and portability. In addition to innovative low-power design techniques, a complementary process technology is required to enable the highest performance devices possible while maintaining extremely low power consumption. Transistors optimized for subthreshold operation at 0.3 V may achieve a 97% reduction in switching energy compared to conventional transistors. The process technology described in this article takes advantage of the capacitance and performance benefits of thin-body silicon-on-insulator devices, combined with a workfunction engineered mid-gap metal gate. 2012-10-18T20:41:30Z 2012-10-18T20:41:30Z 2010-02 2010-01 Article http://purl.org/eprint/type/JournalArticle 0018-9219 1558-2256 http://hdl.handle.net/1721.1/74123 Vitale, S.A. et al. “FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics.” Proceedings of the IEEE 98.2 (2010): 333–342. © 2010 IEEE en_US http://dx.doi.org/10.1109/jproc.2009.2034476 Proceedings of the IEEE Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers (IEEE) IEEE |
| spellingShingle | Vitale, Steven A. Wyatt, Peter W. Checka, Nisha Kedzierski, Jakub T. Keast, Craig L. FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics |
| title | FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics |
| title_full | FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics |
| title_fullStr | FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics |
| title_full_unstemmed | FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics |
| title_short | FDSOI Process Technology for Subthreshold-Operation Ultralow-Power Electronics |
| title_sort | fdsoi process technology for subthreshold operation ultralow power electronics |
| url | http://hdl.handle.net/1721.1/74123 |
| work_keys_str_mv | AT vitalestevena fdsoiprocesstechnologyforsubthresholdoperationultralowpowerelectronics AT wyattpeterw fdsoiprocesstechnologyforsubthresholdoperationultralowpowerelectronics AT checkanisha fdsoiprocesstechnologyforsubthresholdoperationultralowpowerelectronics AT kedzierskijakubt fdsoiprocesstechnologyforsubthresholdoperationultralowpowerelectronics AT keastcraigl fdsoiprocesstechnologyforsubthresholdoperationultralowpowerelectronics |