Femtosecond laser processing of crystalline silicon

Femtosecond laser processing of crystalline silicon

This paper reports the surface morphologies and ablation of crystalline silicon wafers irradiated by infra-red 775 nm Ti:sapphire femtosecond laser. The effects of energy fluences (below and above single-pulse modification) with different number of pulses were studied. New morphological features suc...

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Bibliographic Details
Main Authors: Tran, D. V., Lam, Yee Cheong, Zheng, H. Y., Murukeshan, V. M., Chai, J.C., Hardt, David E.
Format: Article
Language:English
Published: 2004
Subjects:
crystalline silicon
femtosecond laser
morphology
ablation
incubation effect
Online Access:http://hdl.handle.net/1721.1/7449

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