Investigation of aspect ratio of hole drilling from micro to nanoscale via focused ion beam fine milling

Holes with different sizes from microscale to nanoscale were directly fabricated by focused ion beam (FIB) milling in this paper. Maximum aspect ratio of the fabricated holes can be 5:1 for the hole with large size with pure FIB milling, 10:1 for gas assistant etching, and 1:1 for the hole with size...

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Main Authors: Fu, Yongqi, Ngoi, Kok Ann Bryan
Format: Article
Language:English
Published: 2004
Subjects:
Online Access:http://hdl.handle.net/1721.1/7450
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author Fu, Yongqi
Ngoi, Kok Ann Bryan
author_facet Fu, Yongqi
Ngoi, Kok Ann Bryan
author_sort Fu, Yongqi
collection MIT
description Holes with different sizes from microscale to nanoscale were directly fabricated by focused ion beam (FIB) milling in this paper. Maximum aspect ratio of the fabricated holes can be 5:1 for the hole with large size with pure FIB milling, 10:1 for gas assistant etching, and 1:1 for the hole with size below 100 nm. A phenomenon of volume swell at the boundary of the hole was observed. The reason maybe due to the dose dependence of the effective sputter yield in low intensity Gaussian beam tail regions and redeposition. Different materials were used to investigate variation of the aspect ratio. The results show that for some special material, such as Ni-Be, the corresponding aspect ratio can reach 13.8:1 with Cl₂ assistant etching, but only 0.09:1 for Si(100) with single scan of the FIB.
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spelling mit-1721.1/74502019-04-12T07:21:04Z Investigation of aspect ratio of hole drilling from micro to nanoscale via focused ion beam fine milling Fu, Yongqi Ngoi, Kok Ann Bryan AFM micro-hole FIB CI2 Holes with different sizes from microscale to nanoscale were directly fabricated by focused ion beam (FIB) milling in this paper. Maximum aspect ratio of the fabricated holes can be 5:1 for the hole with large size with pure FIB milling, 10:1 for gas assistant etching, and 1:1 for the hole with size below 100 nm. A phenomenon of volume swell at the boundary of the hole was observed. The reason maybe due to the dose dependence of the effective sputter yield in low intensity Gaussian beam tail regions and redeposition. Different materials were used to investigate variation of the aspect ratio. The results show that for some special material, such as Ni-Be, the corresponding aspect ratio can reach 13.8:1 with Cl₂ assistant etching, but only 0.09:1 for Si(100) with single scan of the FIB. Singapore-MIT Alliance (SMA) 2004-12-14T19:33:15Z 2004-12-14T19:33:15Z 2005-01 Article http://hdl.handle.net/1721.1/7450 en Innovation in Manufacturing Systems and Technology (IMST); 509804 bytes application/pdf application/pdf
spellingShingle AFM
micro-hole
FIB
CI2
Fu, Yongqi
Ngoi, Kok Ann Bryan
Investigation of aspect ratio of hole drilling from micro to nanoscale via focused ion beam fine milling
title Investigation of aspect ratio of hole drilling from micro to nanoscale via focused ion beam fine milling
title_full Investigation of aspect ratio of hole drilling from micro to nanoscale via focused ion beam fine milling
title_fullStr Investigation of aspect ratio of hole drilling from micro to nanoscale via focused ion beam fine milling
title_full_unstemmed Investigation of aspect ratio of hole drilling from micro to nanoscale via focused ion beam fine milling
title_short Investigation of aspect ratio of hole drilling from micro to nanoscale via focused ion beam fine milling
title_sort investigation of aspect ratio of hole drilling from micro to nanoscale via focused ion beam fine milling
topic AFM
micro-hole
FIB
CI2
url http://hdl.handle.net/1721.1/7450
work_keys_str_mv AT fuyongqi investigationofaspectratioofholedrillingfrommicrotonanoscaleviafocusedionbeamfinemilling
AT ngoikokannbryan investigationofaspectratioofholedrillingfrommicrotonanoscaleviafocusedionbeamfinemilling