Phase diagrams of Bi[subscript 1−x]Sb[subscript x] thin films with different growth orientations

A closed-form model is developed to evaluate the band-edge shift caused by quantum confinement for a two-dimensional nonparabolic carrier pocket. Based on this model, the symmetries and the band shifts of different carrier pockets are evaluated for Bi[subscript 1−x]Sb[subscript x] thin films that ar...

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Bibliographic Details
Main Authors: Tang, Shuang, Dresselhaus, Mildred
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Physical Society 2012
Online Access:http://hdl.handle.net/1721.1/74501
https://orcid.org/0000-0001-8492-2261
Description
Summary:A closed-form model is developed to evaluate the band-edge shift caused by quantum confinement for a two-dimensional nonparabolic carrier pocket. Based on this model, the symmetries and the band shifts of different carrier pockets are evaluated for Bi[subscript 1−x]Sb[subscript x] thin films that are grown along different crystalline axes. The phase diagrams for the Bi[subscript 1−x]Sb[subscript x] thin film systems with different growth orientations are calculated and analyzed.