A Two-level Prediction Model for Deep Reactive Ion Etch (DRIE)

A Two-level Prediction Model for Deep Reactive Ion Etch (DRIE)

We contribute a quantitative and systematic model to capture etch non-uniformity in deep reactive ion etch of microelectromechanical systems (MEMS) devices. Deep reactive ion etch is commonly used in MEMS fabrication where high-aspect ratio features are to be produced in silicon. It is typical for m...

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Bibliographic Details
Main Authors: Taylor, Hayden K., Sun, Hongwei, Hill, Tyrone F., Schmidt, Martin A., Boning, Duane S.
Format: Article
Language:English
Published: 2004
Subjects:
DRIE
pattern dependencies
CAD
modeling
Online Access:http://hdl.handle.net/1721.1/7469

Internet

http://hdl.handle.net/1721.1/7469

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