Zone folding effect in Raman G-band intensity of twisted bilayer graphene
The G-band Raman intensity is calculated for twisted bilayer graphene as a function of laser excitation energy based on the extended tight binding method. Here we explicitly consider the electron-photon and electron-phonon matrix elements of twisted bilayer graphene to calculate the resonance Raman...
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Physical Society
2013
|
| Online Access: | http://hdl.handle.net/1721.1/75831 https://orcid.org/0000-0001-8492-2261 |
| _version_ | 1826206094531231744 |
|---|---|
| author | Sato, Kentaro Saito, Riichiro Cong, Chunxiao Yu, Ting Dresselhaus, Mildred |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Sato, Kentaro Saito, Riichiro Cong, Chunxiao Yu, Ting Dresselhaus, Mildred |
| author_sort | Sato, Kentaro |
| collection | MIT |
| description | The G-band Raman intensity is calculated for twisted bilayer graphene as a function of laser excitation energy based on the extended tight binding method. Here we explicitly consider the electron-photon and electron-phonon matrix elements of twisted bilayer graphene to calculate the resonance Raman intensity. The G-band Raman intensity is sensitive to the laser excitation energy and the twisting angle between the layers as a result of folding the electronic energy band structure. The Van Hove energy singularity, which is an electron transition energy between the conduction and valence bands, depends on n−m of the twisting vector (n,m). The relative intensity of the G band as a function of twisting vectors is presented, which should be useful for the experimental identification of the twisting angle. |
| first_indexed | 2024-09-23T13:24:00Z |
| format | Article |
| id | mit-1721.1/75831 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T13:24:00Z |
| publishDate | 2013 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | mit-1721.1/758312022-10-01T15:01:36Z Zone folding effect in Raman G-band intensity of twisted bilayer graphene Sato, Kentaro Saito, Riichiro Cong, Chunxiao Yu, Ting Dresselhaus, Mildred Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Physics Dresselhaus, Mildred The G-band Raman intensity is calculated for twisted bilayer graphene as a function of laser excitation energy based on the extended tight binding method. Here we explicitly consider the electron-photon and electron-phonon matrix elements of twisted bilayer graphene to calculate the resonance Raman intensity. The G-band Raman intensity is sensitive to the laser excitation energy and the twisting angle between the layers as a result of folding the electronic energy band structure. The Van Hove energy singularity, which is an electron transition energy between the conduction and valence bands, depends on n−m of the twisting vector (n,m). The relative intensity of the G band as a function of twisting vectors is presented, which should be useful for the experimental identification of the twisting angle. National Science Foundation (U.S.) (Grant DMR-10- 1004147) 2013-01-07T18:23:29Z 2013-01-07T18:23:29Z 2012-09 2012-07 Article http://purl.org/eprint/type/JournalArticle 1098-0121 1550-235X http://hdl.handle.net/1721.1/75831 Sato, Kentaro et al. “Zone Folding Effect in Raman G-band Intensity of Twisted Bilayer Graphene.” Physical Review B 86.12 (2012). © 2012 American Physical Society https://orcid.org/0000-0001-8492-2261 en_US http://dx.doi.org/10.1103/PhysRevB.86.125414 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Physical Society APS |
| spellingShingle | Sato, Kentaro Saito, Riichiro Cong, Chunxiao Yu, Ting Dresselhaus, Mildred Zone folding effect in Raman G-band intensity of twisted bilayer graphene |
| title | Zone folding effect in Raman G-band intensity of twisted bilayer graphene |
| title_full | Zone folding effect in Raman G-band intensity of twisted bilayer graphene |
| title_fullStr | Zone folding effect in Raman G-band intensity of twisted bilayer graphene |
| title_full_unstemmed | Zone folding effect in Raman G-band intensity of twisted bilayer graphene |
| title_short | Zone folding effect in Raman G-band intensity of twisted bilayer graphene |
| title_sort | zone folding effect in raman g band intensity of twisted bilayer graphene |
| url | http://hdl.handle.net/1721.1/75831 https://orcid.org/0000-0001-8492-2261 |
| work_keys_str_mv | AT satokentaro zonefoldingeffectinramangbandintensityoftwistedbilayergraphene AT saitoriichiro zonefoldingeffectinramangbandintensityoftwistedbilayergraphene AT congchunxiao zonefoldingeffectinramangbandintensityoftwistedbilayergraphene AT yuting zonefoldingeffectinramangbandintensityoftwistedbilayergraphene AT dresselhausmildred zonefoldingeffectinramangbandintensityoftwistedbilayergraphene |