A low-noise bandgap voltage reference employing dynamic element matching

Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.

Bibliographic Details
Main Author: Herbst, Steven (Steven G.)
Other Authors: Charlie Sodini.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2013
Subjects:
Online Access:http://hdl.handle.net/1721.1/77071
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author Herbst, Steven (Steven G.)
author2 Charlie Sodini.
author_facet Charlie Sodini.
Herbst, Steven (Steven G.)
author_sort Herbst, Steven (Steven G.)
collection MIT
description Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.
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spelling mit-1721.1/770712019-04-12T16:10:48Z A low-noise bandgap voltage reference employing dynamic element matching Herbst, Steven (Steven G.) Charlie Sodini. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011. Cataloged from PDF version of thesis. Includes bibliographical references (p. 109). Bandgap voltages references are widely used in IC design, but are sensitive to low-frequency noise and component mismatch. This thesis describes the design and testing of a new IC voltage reference that targets these issues through three dynamic element matching (DEM) subsystems. The first is a chopper OTA, and the second two are component rotation schemes: one to exchange the positions of two critical resistors, and the second to cycle through all BJTs, periodically selecting each to participate as the "1" transistor of the N:1 bandgap ratio. Practical designs that address the various switching issues typically associated with DEM, such as glitch and clock drift, are described. Analytic expressions for the effects of noise and mismatch throughout the bandgap reference are derived, along with expressions for calculating the improvement that can be achieved by DEM. A test chip was implemented in a 0.25[mu]m BiCMOS process; with its three DEM subsystems enabled it is shown to achieve a 20x 1/f noise improvement and a 34x mismatch error improvement. by Steven Herbst. M.Eng. 2013-02-14T19:15:51Z 2013-02-14T19:15:51Z 2011 2011 Thesis http://hdl.handle.net/1721.1/77071 824738706 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 109 p. application/pdf Massachusetts Institute of Technology
spellingShingle Electrical Engineering and Computer Science.
Herbst, Steven (Steven G.)
A low-noise bandgap voltage reference employing dynamic element matching
title A low-noise bandgap voltage reference employing dynamic element matching
title_full A low-noise bandgap voltage reference employing dynamic element matching
title_fullStr A low-noise bandgap voltage reference employing dynamic element matching
title_full_unstemmed A low-noise bandgap voltage reference employing dynamic element matching
title_short A low-noise bandgap voltage reference employing dynamic element matching
title_sort low noise bandgap voltage reference employing dynamic element matching
topic Electrical Engineering and Computer Science.
url http://hdl.handle.net/1721.1/77071
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