Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon

Silicon doped with nonequilibrium concentrations of chalcogens using a femtosecond laser exhibits near-unity absorption of sub-bandgap photons to wavelengths of at least 2500 nm. Previous studies have shown that sub-bandgap absorptance decreases with thermal annealing up to 1175 K and that the absor...

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Main Authors: Newman, Bonna Kay, Buonassisi, Tonio, Sher, Meng-Ju, Mazur, Eric
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2013
Online Access:http://hdl.handle.net/1721.1/78013
https://orcid.org/0000-0001-8345-4937
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author Newman, Bonna Kay
Buonassisi, Tonio
Sher, Meng-Ju
Mazur, Eric
author2 Massachusetts Institute of Technology. Department of Mechanical Engineering
author_facet Massachusetts Institute of Technology. Department of Mechanical Engineering
Newman, Bonna Kay
Buonassisi, Tonio
Sher, Meng-Ju
Mazur, Eric
author_sort Newman, Bonna Kay
collection MIT
description Silicon doped with nonequilibrium concentrations of chalcogens using a femtosecond laser exhibits near-unity absorption of sub-bandgap photons to wavelengths of at least 2500 nm. Previous studies have shown that sub-bandgap absorptance decreases with thermal annealing up to 1175 K and that the absorption deactivation correlates with chalcogen diffusivity. In this work, we show that sub-bandgap absorptance can be reactivated by annealing at temperatures between 1350 and 1550 K followed by fast cooling (>50 K/s). Our results suggest that the defects responsible for sub-bandgap absorptance are in equilibrium at high temperatures in hyperdoped Si:chalcogen systems.
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spelling mit-1721.1/780132022-10-01T21:16:08Z Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon Newman, Bonna Kay Buonassisi, Tonio Sher, Meng-Ju Mazur, Eric Massachusetts Institute of Technology. Department of Mechanical Engineering Newman, Bonna Kay Buonassisi, Tonio Silicon doped with nonequilibrium concentrations of chalcogens using a femtosecond laser exhibits near-unity absorption of sub-bandgap photons to wavelengths of at least 2500 nm. Previous studies have shown that sub-bandgap absorptance decreases with thermal annealing up to 1175 K and that the absorption deactivation correlates with chalcogen diffusivity. In this work, we show that sub-bandgap absorptance can be reactivated by annealing at temperatures between 1350 and 1550 K followed by fast cooling (>50 K/s). Our results suggest that the defects responsible for sub-bandgap absorptance are in equilibrium at high temperatures in hyperdoped Si:chalcogen systems. National Science Foundation (U.S.) (Contract CBET 0754227) National Science Foundation (U.S.) (Contract CHE-DMR-DMS 0934480) 2013-03-28T15:34:14Z 2013-03-28T15:34:14Z 2011-06 2010-12 Article http://purl.org/eprint/type/JournalArticle 0003-6951 1077-3118 http://hdl.handle.net/1721.1/78013 Newman, Bonna K. et al. “Reactivation of Sub-bandgap Absorption in Chalcogen-hyperdoped Silicon.” Applied Physics Letters 98.25 (2011): 251905. © 2011 American Institute of Physics https://orcid.org/0000-0001-8345-4937 en_US http://dx.doi.org/10.1063/1.3599450 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT web domain
spellingShingle Newman, Bonna Kay
Buonassisi, Tonio
Sher, Meng-Ju
Mazur, Eric
Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon
title Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon
title_full Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon
title_fullStr Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon
title_full_unstemmed Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon
title_short Reactivation of sub-bandgap absorption in chalcogen-hyperdoped silicon
title_sort reactivation of sub bandgap absorption in chalcogen hyperdoped silicon
url http://hdl.handle.net/1721.1/78013
https://orcid.org/0000-0001-8345-4937
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