Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes
Highly supersaturated solid solutions of selenium or sulfur in silicon were formed by ion implantation followed by nanosecond pulsed laser melting. n[superscript +]p photodiodes fabricated from these materials exhibit gain (external quantum efficiency >3000%) at 12 V of reverse bias and substanti...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2013
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| Online Access: | http://hdl.handle.net/1721.1/78014 https://orcid.org/0000-0001-8345-4937 |
| _version_ | 1811085543696498688 |
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| author | Sullivan, Joseph Timothy Buonassisi, Tonio Said, Aurore J. Recht, Daniel Warrender, Jeffrey M. Persans, Peter D. Aziz, Michael J. |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Sullivan, Joseph Timothy Buonassisi, Tonio Said, Aurore J. Recht, Daniel Warrender, Jeffrey M. Persans, Peter D. Aziz, Michael J. |
| author_sort | Sullivan, Joseph Timothy |
| collection | MIT |
| description | Highly supersaturated solid solutions of selenium or sulfur in silicon were formed by ion implantation followed by nanosecond pulsed laser melting. n[superscript +]p photodiodes fabricated from these materials exhibit gain (external quantum efficiency >3000%) at 12 V of reverse bias and substantial optoelectronic response to light of wavelengths as long as 1250 nm. The amount of gain and the strength of the extended response both decrease with decreasing magnitude of bias voltage, but >100% external quantum efficiency is observed even at 2 V of reverse bias. The behavior is inconsistent with our expectations for avalanche gain or photoconductive gain. |
| first_indexed | 2024-09-23T13:11:16Z |
| format | Article |
| id | mit-1721.1/78014 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T13:11:16Z |
| publishDate | 2013 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/780142022-09-28T12:29:07Z Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes Sullivan, Joseph Timothy Buonassisi, Tonio Said, Aurore J. Recht, Daniel Warrender, Jeffrey M. Persans, Peter D. Aziz, Michael J. Massachusetts Institute of Technology. Department of Mechanical Engineering Sullivan, Joseph Timothy Buonassisi, Tonio Highly supersaturated solid solutions of selenium or sulfur in silicon were formed by ion implantation followed by nanosecond pulsed laser melting. n[superscript +]p photodiodes fabricated from these materials exhibit gain (external quantum efficiency >3000%) at 12 V of reverse bias and substantial optoelectronic response to light of wavelengths as long as 1250 nm. The amount of gain and the strength of the extended response both decrease with decreasing magnitude of bias voltage, but >100% external quantum efficiency is observed even at 2 V of reverse bias. The behavior is inconsistent with our expectations for avalanche gain or photoconductive gain. Army Armament Research, Development, and Engineering Center (U.S.) (Contract W15QKN-07-P-0092) United States. Army Research Office (Grant W911NF-09-1-0470) 2013-03-28T15:45:05Z 2013-03-28T15:45:05Z 2011-08 2011-04 Article http://purl.org/eprint/type/JournalArticle 0003-6951 1077-3118 http://hdl.handle.net/1721.1/78014 Said, Aurore J. et al. “Extended Infrared Photoresponse and Gain in Chalcogen-supersaturated Silicon Photodiodes.” Applied Physics Letters 99.7 (2011): 073503. © 2011 American Institute of Physics https://orcid.org/0000-0001-8345-4937 en_US http://dx.doi.org/10.1063/1.3609871 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT web domain |
| spellingShingle | Sullivan, Joseph Timothy Buonassisi, Tonio Said, Aurore J. Recht, Daniel Warrender, Jeffrey M. Persans, Peter D. Aziz, Michael J. Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes |
| title | Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes |
| title_full | Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes |
| title_fullStr | Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes |
| title_full_unstemmed | Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes |
| title_short | Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes |
| title_sort | extended infrared photoresponse and gain in chalcogen supersaturated silicon photodiodes |
| url | http://hdl.handle.net/1721.1/78014 https://orcid.org/0000-0001-8345-4937 |
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