Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur
We apply soft x-ray emission spectroscopy (XES) to measure the electronic structure of crystalline silicon supersaturated with sulfur (up to 0.7 at. %), a candidate intermediate-band solar cell material. Si L[subscript 2,3] emission features are observed above the conventional Si valence band maximu...
| Main Authors: | , , , , , , , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2013
|
| Online Access: | http://hdl.handle.net/1721.1/78016 https://orcid.org/0000-0001-8345-4937 |
| _version_ | 1826192280637145088 |
|---|---|
| author | Winkler, Mark Thomas Newman, Bonna Kay Buonassisi, Tonio Wilks, R. G. Weinhardt, L. Recht, D. Said, A. J. Zhang, Y. Blum, M. Krause, S. Yang, W. L. Heske, C. Aziz, Michael J. Bar, M. Sullivan, Joseph Timothy, Ph. D. Massachusetts Institute of Technology |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Winkler, Mark Thomas Newman, Bonna Kay Buonassisi, Tonio Wilks, R. G. Weinhardt, L. Recht, D. Said, A. J. Zhang, Y. Blum, M. Krause, S. Yang, W. L. Heske, C. Aziz, Michael J. Bar, M. Sullivan, Joseph Timothy, Ph. D. Massachusetts Institute of Technology |
| author_sort | Winkler, Mark Thomas |
| collection | MIT |
| description | We apply soft x-ray emission spectroscopy (XES) to measure the electronic structure of crystalline silicon supersaturated with sulfur (up to 0.7 at. %), a candidate intermediate-band solar cell material. Si L[subscript 2,3] emission features are observed above the conventional Si valence band maximum, with intensity scaling linearly with S concentration. The lineshape of the S-induced features change across the insulator-to-metal transition, indicating a significant modification of the local electronic structure concurrent with the change in macroscopic electronic behavior. The relationship between the Si L[subscript 2,3] XES spectral features and the anomalously high sub-band gap infrared absorption is discussed. |
| first_indexed | 2024-09-23T09:09:05Z |
| format | Article |
| id | mit-1721.1/78016 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T09:09:05Z |
| publishDate | 2013 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/780162022-09-30T13:45:51Z Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur Winkler, Mark Thomas Newman, Bonna Kay Buonassisi, Tonio Wilks, R. G. Weinhardt, L. Recht, D. Said, A. J. Zhang, Y. Blum, M. Krause, S. Yang, W. L. Heske, C. Aziz, Michael J. Bar, M. Sullivan, Joseph Timothy, Ph. D. Massachusetts Institute of Technology Massachusetts Institute of Technology. Department of Mechanical Engineering Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity Sullivan, Joseph Timothy Winkler, Mark Thomas Newman, Bonna Kay Buonassisi, Tonio We apply soft x-ray emission spectroscopy (XES) to measure the electronic structure of crystalline silicon supersaturated with sulfur (up to 0.7 at. %), a candidate intermediate-band solar cell material. Si L[subscript 2,3] emission features are observed above the conventional Si valence band maximum, with intensity scaling linearly with S concentration. The lineshape of the S-induced features change across the insulator-to-metal transition, indicating a significant modification of the local electronic structure concurrent with the change in macroscopic electronic behavior. The relationship between the Si L[subscript 2,3] XES spectral features and the anomalously high sub-band gap infrared absorption is discussed. Army Armament Research, Development, and Engineering Center (U.S.) (Contract W15QKN-07-P-0092) United States. Army Research Office (Grant W911NF-09-1-0470) 2013-03-28T16:11:20Z 2013-03-28T16:11:20Z 2011-10 2011-07 Article http://purl.org/eprint/type/JournalArticle 0003-6951 1077-3118 http://hdl.handle.net/1721.1/78016 Sullivan, J. T. et al. “Soft X-ray Emission Spectroscopy Studies of the Electronic Structure of Silicon Supersaturated with Sulfur.” Applied Physics Letters 99.14 (2011): 142102. ©2011 American Institute of Physics https://orcid.org/0000-0001-8345-4937 en_US http://dx.doi.org/10.1063/1.3643050 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT web domain |
| spellingShingle | Winkler, Mark Thomas Newman, Bonna Kay Buonassisi, Tonio Wilks, R. G. Weinhardt, L. Recht, D. Said, A. J. Zhang, Y. Blum, M. Krause, S. Yang, W. L. Heske, C. Aziz, Michael J. Bar, M. Sullivan, Joseph Timothy, Ph. D. Massachusetts Institute of Technology Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur |
| title | Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur |
| title_full | Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur |
| title_fullStr | Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur |
| title_full_unstemmed | Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur |
| title_short | Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur |
| title_sort | soft x ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur |
| url | http://hdl.handle.net/1721.1/78016 https://orcid.org/0000-0001-8345-4937 |
| work_keys_str_mv | AT winklermarkthomas softxrayemissionspectroscopystudiesoftheelectronicstructureofsiliconsupersaturatedwithsulfur AT newmanbonnakay softxrayemissionspectroscopystudiesoftheelectronicstructureofsiliconsupersaturatedwithsulfur AT buonassisitonio softxrayemissionspectroscopystudiesoftheelectronicstructureofsiliconsupersaturatedwithsulfur AT wilksrg softxrayemissionspectroscopystudiesoftheelectronicstructureofsiliconsupersaturatedwithsulfur AT weinhardtl softxrayemissionspectroscopystudiesoftheelectronicstructureofsiliconsupersaturatedwithsulfur AT rechtd softxrayemissionspectroscopystudiesoftheelectronicstructureofsiliconsupersaturatedwithsulfur AT saidaj softxrayemissionspectroscopystudiesoftheelectronicstructureofsiliconsupersaturatedwithsulfur AT zhangy softxrayemissionspectroscopystudiesoftheelectronicstructureofsiliconsupersaturatedwithsulfur AT blumm softxrayemissionspectroscopystudiesoftheelectronicstructureofsiliconsupersaturatedwithsulfur AT krauses softxrayemissionspectroscopystudiesoftheelectronicstructureofsiliconsupersaturatedwithsulfur AT yangwl softxrayemissionspectroscopystudiesoftheelectronicstructureofsiliconsupersaturatedwithsulfur AT heskec softxrayemissionspectroscopystudiesoftheelectronicstructureofsiliconsupersaturatedwithsulfur AT azizmichaelj softxrayemissionspectroscopystudiesoftheelectronicstructureofsiliconsupersaturatedwithsulfur AT barm softxrayemissionspectroscopystudiesoftheelectronicstructureofsiliconsupersaturatedwithsulfur AT sullivanjosephtimothyphdmassachusettsinstituteoftechnology softxrayemissionspectroscopystudiesoftheelectronicstructureofsiliconsupersaturatedwithsulfur |