Low contact resistivity of metals on nitrogen-doped cuprous oxide (Cu 2O) thin-films
Forming low-resistivity contacts on cuprous oxide (Cu[subscript 2]O) is an essential step toward demonstrating its suitability as a candidate solar cell material. We measure the contact resistivity of three noble metals (Au, Ag, and Pd) on sputtered Cu[subscript 2]O thin-films with a range of nitrog...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2013
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| Online Access: | http://hdl.handle.net/1721.1/78017 https://orcid.org/0000-0001-8345-4937 |
| _version_ | 1826196778043572224 |
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| author | Siah, Sin Cheng Lee, Yun Seog Segal, Yaron Buonassisi, Anthony |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Siah, Sin Cheng Lee, Yun Seog Segal, Yaron Buonassisi, Anthony |
| author_sort | Siah, Sin Cheng |
| collection | MIT |
| description | Forming low-resistivity contacts on cuprous oxide (Cu[subscript 2]O) is an essential step toward demonstrating its suitability as a candidate solar cell material. We measure the contact resistivity of three noble metals (Au, Ag, and Pd) on sputtered Cu[subscript 2]O thin-films with a range of nitrogen doping levels. Using the circular transmission line model, specific contact resistivity as low as 1.1 × 10[superscript −4] Ω · cm[superscript 2] is measured for Pd contacts on heavily doped Cu[subscript 2]O films. Temperature-dependent current-voltage measurements and X-ray photoemission spectroscopy are used to determine the barrier heights formed at metal/Cu[subscript 2] Ointerfaces. Thermionic emission is observed to dominate for undoped films, whilst field emission dominates for heavily doped films, highlighting the importance of carrier concentration on contact resistivity. Finally, we demonstrate that low contact resistivity can be achieved on heavily doped Cu[subscript 2] films using Earth-abundant metals, such as Cu and Ni. |
| first_indexed | 2024-09-23T10:37:51Z |
| format | Article |
| id | mit-1721.1/78017 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T10:37:51Z |
| publishDate | 2013 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/780172022-09-30T21:51:54Z Low contact resistivity of metals on nitrogen-doped cuprous oxide (Cu 2O) thin-films Siah, Sin Cheng Lee, Yun Seog Segal, Yaron Buonassisi, Anthony Massachusetts Institute of Technology. Department of Mechanical Engineering Massachusetts Institute of Technology. Laboratory for Manufacturing and Productivity Siah, Sin Cheng Lee, Yun Seog Segal, Yaron Buonassisi, Tonio Forming low-resistivity contacts on cuprous oxide (Cu[subscript 2]O) is an essential step toward demonstrating its suitability as a candidate solar cell material. We measure the contact resistivity of three noble metals (Au, Ag, and Pd) on sputtered Cu[subscript 2]O thin-films with a range of nitrogen doping levels. Using the circular transmission line model, specific contact resistivity as low as 1.1 × 10[superscript −4] Ω · cm[superscript 2] is measured for Pd contacts on heavily doped Cu[subscript 2]O films. Temperature-dependent current-voltage measurements and X-ray photoemission spectroscopy are used to determine the barrier heights formed at metal/Cu[subscript 2] Ointerfaces. Thermionic emission is observed to dominate for undoped films, whilst field emission dominates for heavily doped films, highlighting the importance of carrier concentration on contact resistivity. Finally, we demonstrate that low contact resistivity can be achieved on heavily doped Cu[subscript 2] films using Earth-abundant metals, such as Cu and Ni. National Science Foundation (U.S.) (Award DMR-0819762) National Science Foundation (U.S.) (Award ECS-0335765) National Science Foundation (U.S.). CAREER (Award ECCS-1150878) 2013-03-28T16:31:36Z 2013-03-28T16:31:36Z 2012-10 2012-07 Article http://purl.org/eprint/type/JournalArticle 0021-8979 1089-7550 http://hdl.handle.net/1721.1/78017 Siah, Sin Cheng et al. “Low Contact Resistivity of Metals on Nitrogen-doped Cuprous Oxide (Cu2O) Thin-films.” Journal of Applied Physics 112.8 (2012): 084508. © 2012 American Institute of Physics https://orcid.org/0000-0001-8345-4937 en_US http://dx.doi.org/10.1063/1.4758305 Journal of Applied Physics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT web domain |
| spellingShingle | Siah, Sin Cheng Lee, Yun Seog Segal, Yaron Buonassisi, Anthony Low contact resistivity of metals on nitrogen-doped cuprous oxide (Cu 2O) thin-films |
| title | Low contact resistivity of metals on nitrogen-doped cuprous oxide (Cu 2O) thin-films |
| title_full | Low contact resistivity of metals on nitrogen-doped cuprous oxide (Cu 2O) thin-films |
| title_fullStr | Low contact resistivity of metals on nitrogen-doped cuprous oxide (Cu 2O) thin-films |
| title_full_unstemmed | Low contact resistivity of metals on nitrogen-doped cuprous oxide (Cu 2O) thin-films |
| title_short | Low contact resistivity of metals on nitrogen-doped cuprous oxide (Cu 2O) thin-films |
| title_sort | low contact resistivity of metals on nitrogen doped cuprous oxide cu 2o thin films |
| url | http://hdl.handle.net/1721.1/78017 https://orcid.org/0000-0001-8345-4937 |
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