Antimony-Doped Tin(II) Sulfide Thin Films
Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin monosulfide (SnS) is a promising candidate for making absorber layers in scalable...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | en_US |
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American Chemical Society (ACS)
2013
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| Online Access: | http://hdl.handle.net/1721.1/78260 https://orcid.org/0000-0002-7043-5048 https://orcid.org/0000-0001-8345-4937 |
| _version_ | 1811097353569959936 |
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| author | Sinsermsuksakul, Prasert Chakraborty, Rupak Kim, Sang Bok Heald, Steven M. Buonassisi, Tonio Gordon, Roy G. |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Sinsermsuksakul, Prasert Chakraborty, Rupak Kim, Sang Bok Heald, Steven M. Buonassisi, Tonio Gordon, Roy G. |
| author_sort | Sinsermsuksakul, Prasert |
| collection | MIT |
| description | Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin monosulfide (SnS) is a promising candidate for making absorber layers in scalable, inexpensive, and nontoxic solar cells. SnS has always been observed to be a p-type semiconductor. Doping SnS to form an n-type semiconductor would permit the construction of solar cells with p-n homojunctions. This paper reports doping SnS films with antimony, a potential n-type dopant. Small amounts of antimony (1%) were found to greatly increase the electrical resistance of the SnS. The resulting intrinsic SnS(Sb) films could be used for the insulating layer in a p-i-n design for solar cells. Higher concentrations (5%) of antimony did not convert the SnS(Sb) to low-resistivity n-type conductivity, but instead the films retain such a high resistance that the conductivity type could not be determined. Extended X-ray absorption fine structure analysis reveals that the highly doped films contain precipitates of a secondary phase that has chemical bonds characteristic of metallic antimony, rather than the antimony–sulfur bonds found in films with lower concentrations of antimony. |
| first_indexed | 2024-09-23T16:58:15Z |
| format | Article |
| id | mit-1721.1/78260 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T16:58:15Z |
| publishDate | 2013 |
| publisher | American Chemical Society (ACS) |
| record_format | dspace |
| spelling | mit-1721.1/782602022-10-03T09:29:03Z Antimony-Doped Tin(II) Sulfide Thin Films Sinsermsuksakul, Prasert Chakraborty, Rupak Kim, Sang Bok Heald, Steven M. Buonassisi, Tonio Gordon, Roy G. Massachusetts Institute of Technology. Department of Mechanical Engineering Chakraborty, Rupak Buonassisi, Tonio Thin-film solar cells made from earth-abundant, inexpensive, and nontoxic materials are needed to replace the current technologies whose widespread use is limited by their use of scarce, costly, and toxic elements. Tin monosulfide (SnS) is a promising candidate for making absorber layers in scalable, inexpensive, and nontoxic solar cells. SnS has always been observed to be a p-type semiconductor. Doping SnS to form an n-type semiconductor would permit the construction of solar cells with p-n homojunctions. This paper reports doping SnS films with antimony, a potential n-type dopant. Small amounts of antimony (1%) were found to greatly increase the electrical resistance of the SnS. The resulting intrinsic SnS(Sb) films could be used for the insulating layer in a p-i-n design for solar cells. Higher concentrations (5%) of antimony did not convert the SnS(Sb) to low-resistivity n-type conductivity, but instead the films retain such a high resistance that the conductivity type could not be determined. Extended X-ray absorption fine structure analysis reveals that the highly doped films contain precipitates of a secondary phase that has chemical bonds characteristic of metallic antimony, rather than the antimony–sulfur bonds found in films with lower concentrations of antimony. United States. Dept. of Energy. Sunshot Initiative (Contract DE-EE0005329) National Science Foundation (U.S.) (Grant CBET-1032955) 2013-04-02T20:25:31Z 2013-04-02T20:25:31Z 2012-11 2012-10 Article http://purl.org/eprint/type/JournalArticle 0897-4756 1520-5002 http://hdl.handle.net/1721.1/78260 Sinsermsuksakul, Prasert et al. “Antimony-Doped Tin(II) Sulfide Thin Films.” Chemistry of Materials 24.23 (2012): 4556–4562. https://orcid.org/0000-0002-7043-5048 https://orcid.org/0000-0001-8345-4937 en_US http://dx.doi.org/10.1021/cm3024988 Chemistry of Materials Creative Commons Attribution-Noncommercial-Share Alike 3.0 http://creativecommons.org/licenses/by-nc-sa/3.0/ application/pdf American Chemical Society (ACS) Other University Web Domain |
| spellingShingle | Sinsermsuksakul, Prasert Chakraborty, Rupak Kim, Sang Bok Heald, Steven M. Buonassisi, Tonio Gordon, Roy G. Antimony-Doped Tin(II) Sulfide Thin Films |
| title | Antimony-Doped Tin(II) Sulfide Thin Films |
| title_full | Antimony-Doped Tin(II) Sulfide Thin Films |
| title_fullStr | Antimony-Doped Tin(II) Sulfide Thin Films |
| title_full_unstemmed | Antimony-Doped Tin(II) Sulfide Thin Films |
| title_short | Antimony-Doped Tin(II) Sulfide Thin Films |
| title_sort | antimony doped tin ii sulfide thin films |
| url | http://hdl.handle.net/1721.1/78260 https://orcid.org/0000-0002-7043-5048 https://orcid.org/0000-0001-8345-4937 |
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