Thermal conductivity of silicon nanowire arrays with controlled roughness
A two-step metal assisted chemical etching technique is used to systematically vary the sidewall roughness of Si nanowires in vertically aligned arrays. The thermal conductivities of nanowire arrays are studied using time domain thermoreflectance and compared to their high-resolution transmission el...
| Main Authors: | , , , , , , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2013
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| Online Access: | http://hdl.handle.net/1721.1/78624 https://orcid.org/0000-0001-5713-629X |
| _version_ | 1811091750838599680 |
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| author | Feser, Joseph P. Sadhu, Jyothi S. Azeredo, Bruno P. Hsu, Keng H. Ma, Jun Kim, Junhwan Seong, Myunghoon Fang, Nicholas Xuanlai Li, Xiuling Ferreira, Placid M. Sinha, Sanjiv Cahill, David G. |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Feser, Joseph P. Sadhu, Jyothi S. Azeredo, Bruno P. Hsu, Keng H. Ma, Jun Kim, Junhwan Seong, Myunghoon Fang, Nicholas Xuanlai Li, Xiuling Ferreira, Placid M. Sinha, Sanjiv Cahill, David G. |
| author_sort | Feser, Joseph P. |
| collection | MIT |
| description | A two-step metal assisted chemical etching technique is used to systematically vary the sidewall roughness of Si nanowires in vertically aligned arrays. The thermal conductivities of nanowire arrays are studied using time domain thermoreflectance and compared to their high-resolution transmission electron microscopy determined roughness. The thermal conductivity of nanowires with small roughness is close to a theoretical prediction based on an upper limit of the mean-free-paths of phonons given by the nanowire diameter. The thermal conductivity of nanowires with large roughness is found to be significantly below this prediction. Raman spectroscopy reveals that nanowires with large roughness also display significant broadening of the one-phonon peak; the broadening correlates well with the reduction in thermal conductivity. The origin of this broadening is not yet understood, as it is inconsistent with phonon confinement models, but could derive from microstructural changes that affect both the optical phonons observed in Raman scattering and the acoustic phonons that are important for heat conduction. |
| first_indexed | 2024-09-23T15:07:26Z |
| format | Article |
| id | mit-1721.1/78624 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:07:26Z |
| publishDate | 2013 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/786242022-09-29T12:50:56Z Thermal conductivity of silicon nanowire arrays with controlled roughness Feser, Joseph P. Sadhu, Jyothi S. Azeredo, Bruno P. Hsu, Keng H. Ma, Jun Kim, Junhwan Seong, Myunghoon Fang, Nicholas Xuanlai Li, Xiuling Ferreira, Placid M. Sinha, Sanjiv Cahill, David G. Massachusetts Institute of Technology. Department of Mechanical Engineering Fang, Nicholas Xuanlai A two-step metal assisted chemical etching technique is used to systematically vary the sidewall roughness of Si nanowires in vertically aligned arrays. The thermal conductivities of nanowire arrays are studied using time domain thermoreflectance and compared to their high-resolution transmission electron microscopy determined roughness. The thermal conductivity of nanowires with small roughness is close to a theoretical prediction based on an upper limit of the mean-free-paths of phonons given by the nanowire diameter. The thermal conductivity of nanowires with large roughness is found to be significantly below this prediction. Raman spectroscopy reveals that nanowires with large roughness also display significant broadening of the one-phonon peak; the broadening correlates well with the reduction in thermal conductivity. The origin of this broadening is not yet understood, as it is inconsistent with phonon confinement models, but could derive from microstructural changes that affect both the optical phonons observed in Raman scattering and the acoustic phonons that are important for heat conduction. United States. Defense Advanced Research Projects Agency (Contract DOE-DE-AR-0000041PF-ARRA) 2013-04-26T17:44:50Z 2013-04-26T17:44:50Z 2012-12 2012-09 Article http://purl.org/eprint/type/JournalArticle 0021-8979 1089-7550 http://hdl.handle.net/1721.1/78624 Feser, Joseph P., Jyothi S. Sadhu, Bruno P. Azeredo, et al. Thermal Conductivity of Silicon Nanowire Arrays with Controlled Roughness. Journal of Applied Physics 112(11): 114306, 2012. © 2012 American Institute of Physics https://orcid.org/0000-0001-5713-629X en_US http://dx.doi.org/10.1063/1.4767456 Journal of Applied Physics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT web domain |
| spellingShingle | Feser, Joseph P. Sadhu, Jyothi S. Azeredo, Bruno P. Hsu, Keng H. Ma, Jun Kim, Junhwan Seong, Myunghoon Fang, Nicholas Xuanlai Li, Xiuling Ferreira, Placid M. Sinha, Sanjiv Cahill, David G. Thermal conductivity of silicon nanowire arrays with controlled roughness |
| title | Thermal conductivity of silicon nanowire arrays with controlled roughness |
| title_full | Thermal conductivity of silicon nanowire arrays with controlled roughness |
| title_fullStr | Thermal conductivity of silicon nanowire arrays with controlled roughness |
| title_full_unstemmed | Thermal conductivity of silicon nanowire arrays with controlled roughness |
| title_short | Thermal conductivity of silicon nanowire arrays with controlled roughness |
| title_sort | thermal conductivity of silicon nanowire arrays with controlled roughness |
| url | http://hdl.handle.net/1721.1/78624 https://orcid.org/0000-0001-5713-629X |
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