InAsSb detectors for visible to MWIR high operating temperature applications
The Photon-Trap Structures for Quantum Advanced Detectors (PT-SQUAD) program requires MWIR detectors at 200 K. One of the ambitious requirements is to obtain high (> 80 %) quantum efficiency over the visible to MWIR spectral range while maintaining high D* (> 1.0 x 1011 cm √Hz/W) in the MWIR....
| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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SPIE--the International Society for Optical Engineering
2013
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| Online Access: | http://hdl.handle.net/1721.1/78675 https://orcid.org/0000-0002-3968-8530 |
| _version_ | 1826190831630942208 |
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| author | D'Souza, Arvind I. Ionescu, A. C. Salcido, M. Robinson, E. Dawson, L. C. Okerlund, D. L. de Lyon, T. J. Rajavel, R. D. Sharifi, H. Yap, D. Beliciu, M.L. Mehta, S. Dai, W. Chen, Gang Dhar, Nibir Wijewarnasuriya, P. |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering D'Souza, Arvind I. Ionescu, A. C. Salcido, M. Robinson, E. Dawson, L. C. Okerlund, D. L. de Lyon, T. J. Rajavel, R. D. Sharifi, H. Yap, D. Beliciu, M.L. Mehta, S. Dai, W. Chen, Gang Dhar, Nibir Wijewarnasuriya, P. |
| author_sort | D'Souza, Arvind I. |
| collection | MIT |
| description | The Photon-Trap Structures for Quantum Advanced Detectors (PT-SQUAD) program requires MWIR detectors at 200 K. One of the ambitious requirements is to obtain high (> 80 %) quantum efficiency over the visible to MWIR spectral range while maintaining high D* (> 1.0 x 1011 cm √Hz/W) in the MWIR. A prime method to accomplish the goals is by reducing dark diffusion current in the detector via reducing the volume fill ratio (VFR) of the detector while optimizing absorption. Electromagnetic simulations show that an innovative architecture using pyramids as photon trapping structures provide a photon trapping mechanism by refractive-index-matching at the tapered air/semiconductor interface, thus minimizing the reflection and maximizing absorption to > 90 % over the entire visible to MWIR spectral range. InAsSb with bandgap appropriate to obtaining a cutoff wavelength ~ 4.3 μm is chosen as the absorber layer. An added benefit of reducing VFR using pyramids is that no AR-coating is required. Compound-barrier (CB) detector test structures with alloy composition of the InAsSb absorber layer adjusted to achieve 200 K cutoff wavelength of 4.3 μm (InAsSb lattice-matched to GaSb). Dark current density at 200 K is in the low 10-4 A/cm2 at Vd = -1.0 V. External QE ~ 0.65 has been measured for detectors with a Si carrier wafer attached. Since illumination is through the Si carrier wafer that has a reflectance of ~ 30 %, this results in an internal QE > 0.9. |
| first_indexed | 2024-09-23T08:46:01Z |
| format | Article |
| id | mit-1721.1/78675 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T08:46:01Z |
| publishDate | 2013 |
| publisher | SPIE--the International Society for Optical Engineering |
| record_format | dspace |
| spelling | mit-1721.1/786752022-09-23T14:24:35Z InAsSb detectors for visible to MWIR high operating temperature applications D'Souza, Arvind I. Ionescu, A. C. Salcido, M. Robinson, E. Dawson, L. C. Okerlund, D. L. de Lyon, T. J. Rajavel, R. D. Sharifi, H. Yap, D. Beliciu, M.L. Mehta, S. Dai, W. Chen, Gang Dhar, Nibir Wijewarnasuriya, P. Massachusetts Institute of Technology. Department of Mechanical Engineering Chen, Gang Dai, W. The Photon-Trap Structures for Quantum Advanced Detectors (PT-SQUAD) program requires MWIR detectors at 200 K. One of the ambitious requirements is to obtain high (> 80 %) quantum efficiency over the visible to MWIR spectral range while maintaining high D* (> 1.0 x 1011 cm √Hz/W) in the MWIR. A prime method to accomplish the goals is by reducing dark diffusion current in the detector via reducing the volume fill ratio (VFR) of the detector while optimizing absorption. Electromagnetic simulations show that an innovative architecture using pyramids as photon trapping structures provide a photon trapping mechanism by refractive-index-matching at the tapered air/semiconductor interface, thus minimizing the reflection and maximizing absorption to > 90 % over the entire visible to MWIR spectral range. InAsSb with bandgap appropriate to obtaining a cutoff wavelength ~ 4.3 μm is chosen as the absorber layer. An added benefit of reducing VFR using pyramids is that no AR-coating is required. Compound-barrier (CB) detector test structures with alloy composition of the InAsSb absorber layer adjusted to achieve 200 K cutoff wavelength of 4.3 μm (InAsSb lattice-matched to GaSb). Dark current density at 200 K is in the low 10-4 A/cm2 at Vd = -1.0 V. External QE ~ 0.65 has been measured for detectors with a Si carrier wafer attached. Since illumination is through the Si carrier wafer that has a reflectance of ~ 30 %, this results in an internal QE > 0.9. United States. Defense Advanced Research Projects Agency (DARPA under contract N66604-09-C-3652) 2013-05-02T19:52:08Z 2013-05-02T19:52:08Z 2011-05 Article http://purl.org/eprint/type/ConferencePaper 9780819485861 0819485861 0277-786X Proceedings of SPIE ; vol. 8012 http://hdl.handle.net/1721.1/78675 D'Souza,A. I., A. C. Ionescu, M. Salcido, E. Robinson, L. C. Dawson, D. L. Okerlund, T. J. de Lyon, R. D. Rajavel, H. Sharifi, D. Yap, M. L. Beliciu, S. Mehta, W. Dai, G. Chen, N. Dhar and P. Wijewarnasuriya. "InAsSb detectors for visible to MWIR high-operating temperature applications", In Infrared Technology and Applications XXXVII, edited by Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Orlando, Florida, USA, April 25, 2011. 80122S. (SPIE Proceedings; vol. 8012). © 2011 SPIE. https://orcid.org/0000-0002-3968-8530 en_US http://dx.doi.org/10.1117/12.884550 Proceedings of SPIE--the International Society for Optical Engineering Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf SPIE--the International Society for Optical Engineering SPIE |
| spellingShingle | D'Souza, Arvind I. Ionescu, A. C. Salcido, M. Robinson, E. Dawson, L. C. Okerlund, D. L. de Lyon, T. J. Rajavel, R. D. Sharifi, H. Yap, D. Beliciu, M.L. Mehta, S. Dai, W. Chen, Gang Dhar, Nibir Wijewarnasuriya, P. InAsSb detectors for visible to MWIR high operating temperature applications |
| title | InAsSb detectors for visible to MWIR high operating temperature applications |
| title_full | InAsSb detectors for visible to MWIR high operating temperature applications |
| title_fullStr | InAsSb detectors for visible to MWIR high operating temperature applications |
| title_full_unstemmed | InAsSb detectors for visible to MWIR high operating temperature applications |
| title_short | InAsSb detectors for visible to MWIR high operating temperature applications |
| title_sort | inassb detectors for visible to mwir high operating temperature applications |
| url | http://hdl.handle.net/1721.1/78675 https://orcid.org/0000-0002-3968-8530 |
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