Superconducting Spin Switch with Infinite Magnetoresistance Induced by an Internal Exchange Field

A theoretical prediction by de Gennes suggests that the resistance in a FI/S/FI (where FI is a ferromagnetic insulator, and S is a superconductor) structure will depend on the magnetization direction of the two FI layers. We report a magnetotransport measurement in a EuS/Al/EuS structure, showing th...

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Bibliographic Details
Main Authors: Li, Bin, Roschewsky, Niklas, Assaf, Badih A., Eich, Marius, Epstein-Martin, Marguerite, Heiman, D., Muenzenberg, Markus G., Moodera, Jagadeesh
Other Authors: Massachusetts Institute of Technology. Department of Physics
Format: Article
Language:en_US
Published: American Physical Society 2013
Online Access:http://hdl.handle.net/1721.1/78880
https://orcid.org/0000-0002-2480-1211
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Summary:A theoretical prediction by de Gennes suggests that the resistance in a FI/S/FI (where FI is a ferromagnetic insulator, and S is a superconductor) structure will depend on the magnetization direction of the two FI layers. We report a magnetotransport measurement in a EuS/Al/EuS structure, showing that an infinite magnetoresistance can be produced by tuning the internal exchange field at the FI/S interface. This proximity effect at the interface can be suppressed by an Al[subscript 2]O[subscript 3] barrier as thin as 0.3 nm, showing the extreme confinement of the interaction to the interface giving rise to the demonstrated phenomena.