Voltage-gated modulation of domain wall creep dynamics in an ultrathin metallic ferromagnet

The influence of gate voltage, temperature, and magnetic field on domain wall (DW) creep dynamics is investigated in Pt/Co/gadolinium oxide (GdOx) films with perpendicular magnetic anisotropy and imaged by a scanning magneto-optical Kerr effect technique. The DW creep velocity can be controlled by a...

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Main Authors: Bauer, Uwe, Emori, Satoru, Beach, Geoffrey Stephen
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Institute of Physics 2013
Online Access:http://hdl.handle.net/1721.1/79413
https://orcid.org/0000-0002-9998-7276
_version_ 1811092563822641152
author Bauer, Uwe
Emori, Satoru
Beach, Geoffrey Stephen
author2 Massachusetts Institute of Technology. Department of Materials Science and Engineering
author_facet Massachusetts Institute of Technology. Department of Materials Science and Engineering
Bauer, Uwe
Emori, Satoru
Beach, Geoffrey Stephen
author_sort Bauer, Uwe
collection MIT
description The influence of gate voltage, temperature, and magnetic field on domain wall (DW) creep dynamics is investigated in Pt/Co/gadolinium oxide (GdOx) films with perpendicular magnetic anisotropy and imaged by a scanning magneto-optical Kerr effect technique. The DW creep velocity can be controlled by an electric field applied to the Co/GdOx interface via a linear modulation of the activation energy barrier with gate voltage. At low speeds, the DW velocity can be changed significantly by a gate voltage, but the effect is diminished as the DW velocity increases, which limits electric field control of fast DW motion.
first_indexed 2024-09-23T15:20:12Z
format Article
id mit-1721.1/79413
institution Massachusetts Institute of Technology
language en_US
last_indexed 2024-09-23T15:20:12Z
publishDate 2013
publisher American Institute of Physics
record_format dspace
spelling mit-1721.1/794132022-10-02T02:16:02Z Voltage-gated modulation of domain wall creep dynamics in an ultrathin metallic ferromagnet Bauer, Uwe Emori, Satoru Beach, Geoffrey Stephen Massachusetts Institute of Technology. Department of Materials Science and Engineering Bauer, Uwe Emori, Satoru Beach, Geoffrey Stephen The influence of gate voltage, temperature, and magnetic field on domain wall (DW) creep dynamics is investigated in Pt/Co/gadolinium oxide (GdOx) films with perpendicular magnetic anisotropy and imaged by a scanning magneto-optical Kerr effect technique. The DW creep velocity can be controlled by an electric field applied to the Co/GdOx interface via a linear modulation of the activation energy barrier with gate voltage. At low speeds, the DW velocity can be changed significantly by a gate voltage, but the effect is diminished as the DW velocity increases, which limits electric field control of fast DW motion. National Science Foundation (U.S.) (NSF-ECCS-1128439) National Science Foundation (U.S.) (Graduate Research Fellowship Program) 2013-07-02T19:45:29Z 2013-07-02T19:45:29Z 2012-10 2012-06 Article http://purl.org/eprint/type/JournalArticle 00036951 http://hdl.handle.net/1721.1/79413 Bauer, Uwe, Satoru Emori, and Geoffrey S. D. Beach. Voltage-gated Modulation of Domain Wall Creep Dynamics in an Ultrathin Metallic Ferromagnet. Applied Physics Letters 101, no. 17 (2012): 172403. © 2012 American Institute of Physics. https://orcid.org/0000-0002-9998-7276 en_US http://dx.doi.org/10.1063/1.4764071 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics MIT web domain
spellingShingle Bauer, Uwe
Emori, Satoru
Beach, Geoffrey Stephen
Voltage-gated modulation of domain wall creep dynamics in an ultrathin metallic ferromagnet
title Voltage-gated modulation of domain wall creep dynamics in an ultrathin metallic ferromagnet
title_full Voltage-gated modulation of domain wall creep dynamics in an ultrathin metallic ferromagnet
title_fullStr Voltage-gated modulation of domain wall creep dynamics in an ultrathin metallic ferromagnet
title_full_unstemmed Voltage-gated modulation of domain wall creep dynamics in an ultrathin metallic ferromagnet
title_short Voltage-gated modulation of domain wall creep dynamics in an ultrathin metallic ferromagnet
title_sort voltage gated modulation of domain wall creep dynamics in an ultrathin metallic ferromagnet
url http://hdl.handle.net/1721.1/79413
https://orcid.org/0000-0002-9998-7276
work_keys_str_mv AT baueruwe voltagegatedmodulationofdomainwallcreepdynamicsinanultrathinmetallicferromagnet
AT emorisatoru voltagegatedmodulationofdomainwallcreepdynamicsinanultrathinmetallicferromagnet
AT beachgeoffreystephen voltagegatedmodulationofdomainwallcreepdynamicsinanultrathinmetallicferromagnet