Voltage-gated modulation of domain wall creep dynamics in an ultrathin metallic ferromagnet

Voltage-gated modulation of domain wall creep dynamics in an ultrathin metallic ferromagnet

The influence of gate voltage, temperature, and magnetic field on domain wall (DW) creep dynamics is investigated in Pt/Co/gadolinium oxide (GdOx) films with perpendicular magnetic anisotropy and imaged by a scanning magneto-optical Kerr effect technique. The DW creep velocity can be controlled by a...

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Bibliographic Details
Main Authors:	Bauer, Uwe, Emori, Satoru, Beach, Geoffrey Stephen
Other Authors:	Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format:	Article
Language:	en_US
Published:	American Institute of Physics 2013
Online Access:	http://hdl.handle.net/1721.1/79413 https://orcid.org/0000-0002-9998-7276

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