Pressure-induced phase transformations during femtosecond-laser doping of silicon
Silicon hyperdoped with chalcogens via femtosecond-laser irradiation exhibits unique near-unity sub-bandgap absorptance extending into the infrared region. The intense light-matter interactions that occur during femtosecond-laser doping produce pressure waves sufficient to induce phase transformatio...
Main Authors: | Smith, Matthew J., Lin, Yu-Ting, Sher, Meng-Ju, Winkler, Mark T., Mazur, Eric, Gradecak, Silvija |
---|---|
Other Authors: | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
Format: | Article |
Language: | en_US |
Published: |
American Institute of Physics (AIP)
2013
|
Online Access: | http://hdl.handle.net/1721.1/79624 |
Similar Items
-
The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation
by: Smith, Matthew J., et al.
Published: (2013) -
Studying femtosecond-laser hyperdoping by controlling surface morphology
by: Winkler, Mark T., et al.
Published: (2013) -
Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor
by: Sher, Meng-Ju, et al.
Published: (2017) -
The origins of pressure-induced phase transformations during the surface texturing of silicon using femtosecond laser irradiation
by: Smith, MJ, et al.
Published: (2012) -
Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor
by: Smith, MJ, et al.
Published: (2013)