Free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures by gas-phase etching of germanium
We outline a facile fabrication technique for the realization of free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures of arbitrary aluminum content. Utilizing xenon difluoride (XeF[subscript 2]) we rapidly and selectively remove a sacrificial germanium (Ge) underlayer in a room temperat...
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| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2013
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| Online Access: | http://hdl.handle.net/1721.1/79626 https://orcid.org/0000-0002-1891-1959 |
| _version_ | 1826204767210176512 |
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| author | Cole, Garrett D. Bai, Yu Aspelmeyer, Markus Fitzgerald, Eugene A. |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Cole, Garrett D. Bai, Yu Aspelmeyer, Markus Fitzgerald, Eugene A. |
| author_sort | Cole, Garrett D. |
| collection | MIT |
| description | We outline a facile fabrication technique for the realization of free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures of arbitrary aluminum content. Utilizing xenon difluoride (XeF[subscript 2]) we rapidly and selectively remove a sacrificial germanium (Ge) underlayer in a room temperature gas-phase etching procedure. We demonstrate two possibilities for exploiting this unique process: (1) bulk micromachining of a suspended high-frequency low-dissipation micro-optomechanical resonator consisting of an epitaxial GaAs/AlAs multilayer grown on a Ge substrate and (2) epitaxial lift-off of a GaAs film via removal of an embedded Ge sacrificial layer, resulting in lateral etch rates up to 3 mm/h and a conservative selectivity of ∼ 10[superscript 6]. |
| first_indexed | 2024-09-23T13:01:05Z |
| format | Article |
| id | mit-1721.1/79626 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T13:01:05Z |
| publishDate | 2013 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/796262022-10-01T12:29:37Z Free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures by gas-phase etching of germanium Cole, Garrett D. Bai, Yu Aspelmeyer, Markus Fitzgerald, Eugene A. Massachusetts Institute of Technology. Department of Materials Science and Engineering Bai, Yu Fitzgerald, Eugene A. We outline a facile fabrication technique for the realization of free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures of arbitrary aluminum content. Utilizing xenon difluoride (XeF[subscript 2]) we rapidly and selectively remove a sacrificial germanium (Ge) underlayer in a room temperature gas-phase etching procedure. We demonstrate two possibilities for exploiting this unique process: (1) bulk micromachining of a suspended high-frequency low-dissipation micro-optomechanical resonator consisting of an epitaxial GaAs/AlAs multilayer grown on a Ge substrate and (2) epitaxial lift-off of a GaAs film via removal of an embedded Ge sacrificial layer, resulting in lateral etch rates up to 3 mm/h and a conservative selectivity of ∼ 10[superscript 6]. 2013-07-18T18:41:55Z 2013-07-18T18:41:55Z 2010-06 2010-04 Article http://purl.org/eprint/type/JournalArticle 00036951 1077-3118 http://hdl.handle.net/1721.1/79626 Cole, Garrett D., Yu Bai, Markus Aspelmeyer, and Eugene A. Fitzgerald. “Free-standing Al[sub x]Ga[sub 1−x]As heterostructures by gas-phase etching of germanium.” Applied Physics Letters 96, no. 26 (2010): 261102. © 2010 American Institute of Physics https://orcid.org/0000-0002-1891-1959 en_US http://dx.doi.org/10.1063/1.3455104 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT web domain |
| spellingShingle | Cole, Garrett D. Bai, Yu Aspelmeyer, Markus Fitzgerald, Eugene A. Free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures by gas-phase etching of germanium |
| title | Free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures by gas-phase etching of germanium |
| title_full | Free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures by gas-phase etching of germanium |
| title_fullStr | Free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures by gas-phase etching of germanium |
| title_full_unstemmed | Free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures by gas-phase etching of germanium |
| title_short | Free-standing Al[subscript x]Ga[subscript 1−x]As heterostructures by gas-phase etching of germanium |
| title_sort | free standing al subscript x ga subscript 1 x as heterostructures by gas phase etching of germanium |
| url | http://hdl.handle.net/1721.1/79626 https://orcid.org/0000-0002-1891-1959 |
| work_keys_str_mv | AT colegarrettd freestandingalsubscriptxgasubscript1xasheterostructuresbygasphaseetchingofgermanium AT baiyu freestandingalsubscriptxgasubscript1xasheterostructuresbygasphaseetchingofgermanium AT aspelmeyermarkus freestandingalsubscriptxgasubscript1xasheterostructuresbygasphaseetchingofgermanium AT fitzgeraldeugenea freestandingalsubscriptxgasubscript1xasheterostructuresbygasphaseetchingofgermanium |