Correlation of doping, structure, and carrier dynamics in a single GaN nanorod

Correlation of doping, structure, and carrier dynamics in a single GaN nanorod

We report the nanoscale optical investigation of a single GaN p-n junction nanorod by cathodoluminescence (CL) in a scanning transmission electron microscope. CL emission characteristic of dopant-related transitions was correlated to doping and structural defect in the nanorod, and used to determine...

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Bibliographic Details
Main Authors:	Zhou, Xiang, Lu, Ming-Yen, Lu, Yu-Jung, Gwo, Shangjr, Gradecak, Silvija
Other Authors:	Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format:	Article
Language:	en_US
Published:	American Institute of Physics (AIP) 2013
Online Access:	http://hdl.handle.net/1721.1/79628 https://orcid.org/0000-0002-3852-3224

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