Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold
The high intensity of light emitted in In[subscript x]Ga[subscript 1−x]N/GaN heterostructures has been generally attributed to the formation of indium-rich clusters in In[subscript x]Ga[subscript 1−x]N quantum wells (QWs). However, there is significant disagreement about the existence of such cluste...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2013
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| Online Access: | http://hdl.handle.net/1721.1/79641 |
| _version_ | 1826211369036283904 |
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| author | Baloch, Kamal H. Johnston-Peck, Aaron C. Kisslinger, Kim Stach, Eric A. Gradecak, Silvija |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Baloch, Kamal H. Johnston-Peck, Aaron C. Kisslinger, Kim Stach, Eric A. Gradecak, Silvija |
| author_sort | Baloch, Kamal H. |
| collection | MIT |
| description | The high intensity of light emitted in In[subscript x]Ga[subscript 1−x]N/GaN heterostructures has been generally attributed to the formation of indium-rich clusters in In[subscript x]Ga[subscript 1−x]N quantum wells (QWs). However, there is significant disagreement about the existence of such clusters in as-grown In[subscript x]Ga[subscript 1−x]N QWs. We employ atomically resolved CS-corrected scanning transmission electron microscopy and electron energy loss spectroscopy at 120 kV—which we demonstrate to be below the knock-on displacement threshold—and show that indium clustering is not present in as-grown In[subscript 0.22]Ga[subscript 0.78]N QWs. This artifact-free, atomically resolved method can be employed for investigating compositional variations in other In[subscript x]Ga[subscript 1−x]N/GaN heterostructures. |
| first_indexed | 2024-09-23T15:04:47Z |
| format | Article |
| id | mit-1721.1/79641 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:04:47Z |
| publishDate | 2013 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/796412022-09-29T12:32:35Z Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold Baloch, Kamal H. Johnston-Peck, Aaron C. Kisslinger, Kim Stach, Eric A. Gradecak, Silvija Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Research Laboratory of Electronics Baloch, Kamal H. Gradecak, Silvija The high intensity of light emitted in In[subscript x]Ga[subscript 1−x]N/GaN heterostructures has been generally attributed to the formation of indium-rich clusters in In[subscript x]Ga[subscript 1−x]N quantum wells (QWs). However, there is significant disagreement about the existence of such clusters in as-grown In[subscript x]Ga[subscript 1−x]N QWs. We employ atomically resolved CS-corrected scanning transmission electron microscopy and electron energy loss spectroscopy at 120 kV—which we demonstrate to be below the knock-on displacement threshold—and show that indium clustering is not present in as-grown In[subscript 0.22]Ga[subscript 0.78]N QWs. This artifact-free, atomically resolved method can be employed for investigating compositional variations in other In[subscript x]Ga[subscript 1−x]N/GaN heterostructures. United States. Dept. of Energy. Office of Basic Energy Sciences (Contract DE-AC02- 98CH10886) United States. Dept. of Energy. Office of Basic Energy Sciences (United States. Dept. of Energy. Center for Excitonics Award DE-SC0001088) 2013-07-22T15:18:45Z 2013-07-22T15:18:45Z 2013-05 2013-04 Article http://purl.org/eprint/type/JournalArticle 00036951 1077-3118 http://hdl.handle.net/1721.1/79641 Baloch, Kamal H., Aaron C. Johnston-Peck, Kim Kisslinger, Eric A. Stach, and Silvija Gradečak. “Revisiting the ‘In-clustering’ question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold.” Applied Physics Letters 102, no. 19 (2013): 191910. © 2013 AIP Publishing LLC en_US http://dx.doi.org/10.1063/1.4807122 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT web domain |
| spellingShingle | Baloch, Kamal H. Johnston-Peck, Aaron C. Kisslinger, Kim Stach, Eric A. Gradecak, Silvija Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold |
| title | Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold |
| title_full | Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold |
| title_fullStr | Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold |
| title_full_unstemmed | Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold |
| title_short | Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold |
| title_sort | revisiting the in clustering question in ingan through the use of aberration corrected electron microscopy below the knock on threshold |
| url | http://hdl.handle.net/1721.1/79641 |
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