Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold

Revisiting the “In-clustering” question in InGaN through the use of aberration-corrected electron microscopy below the knock-on threshold

The high intensity of light emitted in In[subscript x]Ga[subscript 1−x]N/GaN heterostructures has been generally attributed to the formation of indium-rich clusters in In[subscript x]Ga[subscript 1−x]N quantum wells (QWs). However, there is significant disagreement about the existence of such cluste...

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Bibliographic Details
Main Authors: Baloch, Kamal H., Johnston-Peck, Aaron C., Kisslinger, Kim, Stach, Eric A., Gradecak, Silvija
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2013
Online Access:http://hdl.handle.net/1721.1/79641

Internet

http://hdl.handle.net/1721.1/79641

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