Electric field control of domain wall propagation in Pt/Co/GdOx films
The influence of a gate voltage on domain wall (DW) propagation is investigated in ultrathin Pt/Co/gadolinium oxide (GdOx) films with perpendicular magnetic anisotropy. The DW propagation field can be enhanced or retarded by an electric field at the Co/GdOx interface and scales linearly with gate vo...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2013
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| Online Access: | http://hdl.handle.net/1721.1/79658 https://orcid.org/0000-0002-9998-7276 |
| Summary: | The influence of a gate voltage on domain wall (DW) propagation is investigated in ultrathin Pt/Co/gadolinium oxide (GdOx) films with perpendicular magnetic anisotropy. The DW propagation field can be enhanced or retarded by an electric field at the Co/GdOx interface and scales linearly with gate voltage up to moderate bias levels. Higher gate voltage levels, corresponding to electric fields >0.2 V/nm, produce a large irreversible change to the magnetic anisotropy that can enable nonvolatile switching of the coercivity. |
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