Room-temperature oxygen sensitization in highly textured, nanocrystalline PbTe films: A mechanistic study
In this paper, we report large mid-wave infrared photoconductivity in highly textured, nanocrystalline PbTe films thermally evaporated on Si at room temperature. Responsivity as high as 25 V/W is measured at the 3.5 μm wavelength. The large photoconductivity is attributed to the oxygen incorporation...
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics (AIP)
2013
|
| Online Access: | http://hdl.handle.net/1721.1/79729 https://orcid.org/0000-0002-7233-3918 https://orcid.org/0000-0002-0769-0652 https://orcid.org/0000-0002-3913-6189 |
| Summary: | In this paper, we report large mid-wave infrared photoconductivity in highly textured, nanocrystalline PbTe films thermally evaporated on Si at room temperature. Responsivity as high as 25 V/W is measured at the 3.5 μm wavelength. The large photoconductivity is attributed to the oxygen incorporation in the films by diffusion. Carrier concentration as low as 10[superscript 17] cm[superscript −3] is identified to be the consequence of Fermi level pinning induced by the diffused oxygen. The successful demonstration of IR-sensitive PbTe films without the need for high-temperature processing presents an important step toward monolithic integration of mid-wave PbTe infrared detectors on Si read-out integrated circuits (ROICs). |
|---|