Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform
In this paper, we demonstrate high optical quantum efficiency (90%) resonant-cavity-enhanced mid-infrared photodetectors fabricated monolithically on a silicon platform. High quality photoconductive polycrystalline PbTe film is thermally evaporated, oxygen-sensitized at room temperature and acts as...
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| Format: | Article |
| Language: | en_US |
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Optical Society of America
2013
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| Online Access: | http://hdl.handle.net/1721.1/79731 https://orcid.org/0000-0002-7233-3918 https://orcid.org/0000-0002-0769-0652 https://orcid.org/0000-0002-3913-6189 |
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| author | Wang, Jianfei Hu, Juejun Becla, Piotr Kimerling, Lionel C. Agarwal, Anuradha Murthy |
| author2 | MIT Materials Research Laboratory |
| author_facet | MIT Materials Research Laboratory Wang, Jianfei Hu, Juejun Becla, Piotr Kimerling, Lionel C. Agarwal, Anuradha Murthy |
| author_sort | Wang, Jianfei |
| collection | MIT |
| description | In this paper, we demonstrate high optical quantum efficiency (90%) resonant-cavity-enhanced mid-infrared photodetectors fabricated monolithically on a silicon platform. High quality photoconductive polycrystalline PbTe film is thermally evaporated, oxygen-sensitized at room temperature and acts as the infrared absorber. The cavity-enhanced detector operates in the critical coupling regime and shows a peak responsivity of 100 V/W at the resonant wavelength of 3.5 μm, 13.4 times higher compared to blanket PbTe film of the same thickness. Detectivity as high as 0.72 × 10[superscript 9] cmHz[superscript 1/2]W[superscript −1] has been measured, comparable with commercial polycrystalline mid-infrared photodetectors. As low temperature processing (< 160 °C) is implemented in the entire fabrication process, our detector is promising for monolithic integration with Si readout integrated circuits. |
| first_indexed | 2024-09-23T14:13:58Z |
| format | Article |
| id | mit-1721.1/79731 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T14:13:58Z |
| publishDate | 2013 |
| publisher | Optical Society of America |
| record_format | dspace |
| spelling | mit-1721.1/797312022-10-01T19:55:15Z Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform Wang, Jianfei Hu, Juejun Becla, Piotr Kimerling, Lionel C. Agarwal, Anuradha Murthy MIT Materials Research Laboratory Massachusetts Institute of Technology. Department of Materials Science and Engineering Wang, Jianfei Hu, Juejun Becla, Piotr Agarwal, Anuradha Murthy Kimerling, Lionel C. In this paper, we demonstrate high optical quantum efficiency (90%) resonant-cavity-enhanced mid-infrared photodetectors fabricated monolithically on a silicon platform. High quality photoconductive polycrystalline PbTe film is thermally evaporated, oxygen-sensitized at room temperature and acts as the infrared absorber. The cavity-enhanced detector operates in the critical coupling regime and shows a peak responsivity of 100 V/W at the resonant wavelength of 3.5 μm, 13.4 times higher compared to blanket PbTe film of the same thickness. Detectivity as high as 0.72 × 10[superscript 9] cmHz[superscript 1/2]W[superscript −1] has been measured, comparable with commercial polycrystalline mid-infrared photodetectors. As low temperature processing (< 160 °C) is implemented in the entire fabrication process, our detector is promising for monolithic integration with Si readout integrated circuits. 2013-07-30T18:36:59Z 2013-07-30T18:36:59Z 2010-06 2010-05 Article http://purl.org/eprint/type/JournalArticle 1094-4087 http://hdl.handle.net/1721.1/79731 Wang, Jianfei, Juejun Hu, Piotr Becla, Anuradha M. Agarwal, and Lionel C. Kimerling. “Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform.” Optics Express 18, no. 12 (June 1, 2010): 12890. © 2010 OSA https://orcid.org/0000-0002-7233-3918 https://orcid.org/0000-0002-0769-0652 https://orcid.org/0000-0002-3913-6189 en_US http://dx.doi.org/10.1364/OE.18.012890 Optics Express Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Optical Society of America MIT web domain |
| spellingShingle | Wang, Jianfei Hu, Juejun Becla, Piotr Kimerling, Lionel C. Agarwal, Anuradha Murthy Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform |
| title | Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform |
| title_full | Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform |
| title_fullStr | Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform |
| title_full_unstemmed | Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform |
| title_short | Resonant-cavity-enhanced mid-infrared photodetector on a silicon platform |
| title_sort | resonant cavity enhanced mid infrared photodetector on a silicon platform |
| url | http://hdl.handle.net/1721.1/79731 https://orcid.org/0000-0002-7233-3918 https://orcid.org/0000-0002-0769-0652 https://orcid.org/0000-0002-3913-6189 |
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