Large inherent optical gain from the direct gap transition of Ge thin films
The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (Γ) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ≥1300 cm[superscript −1] at room temperature from both tensile-strained n[superscrip...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2013
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| Online Access: | http://hdl.handle.net/1721.1/79733 https://orcid.org/0000-0002-3913-6189 |
| _version_ | 1826194582382051328 |
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| author | Wang, Xiaoxin Kimerling, Lionel C. Michel, Jurgen Liu, Jifeng |
| author2 | MIT Materials Research Laboratory |
| author_facet | MIT Materials Research Laboratory Wang, Xiaoxin Kimerling, Lionel C. Michel, Jurgen Liu, Jifeng |
| author_sort | Wang, Xiaoxin |
| collection | MIT |
| description | The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (Γ) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ≥1300 cm[superscript −1] at room temperature from both tensile-strained n[superscript +] Ge-on-Si films and intrinsic Ge-on-insulator using femtosecond transmittance spectroscopy captured before direct-to-indirect valley scattering. This inherent direct gap gain is comparable to III-V semiconductors. For n[superscript +] Ge, this transient gain is ∼25× larger than its steady state gain, suggesting that reducing Γ→L or enhancing L→Γ intervalley scattering may significantly increase the optical gain of Ge lasers. |
| first_indexed | 2024-09-23T09:58:29Z |
| format | Article |
| id | mit-1721.1/79733 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T09:58:29Z |
| publishDate | 2013 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/797332022-09-26T14:56:03Z Large inherent optical gain from the direct gap transition of Ge thin films Wang, Xiaoxin Kimerling, Lionel C. Michel, Jurgen Liu, Jifeng MIT Materials Research Laboratory Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Microphotonics Center Kimerling, Lionel C. Michel, Jurgen The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (Γ) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ≥1300 cm[superscript −1] at room temperature from both tensile-strained n[superscript +] Ge-on-Si films and intrinsic Ge-on-insulator using femtosecond transmittance spectroscopy captured before direct-to-indirect valley scattering. This inherent direct gap gain is comparable to III-V semiconductors. For n[superscript +] Ge, this transient gain is ∼25× larger than its steady state gain, suggesting that reducing Γ→L or enhancing L→Γ intervalley scattering may significantly increase the optical gain of Ge lasers. APIC Corporation. Fully LASER Integrated Photonics (FLIP) Program Naval Air Warfare Center (U.S.). Aircraft Division (OTA N00421-03-9-0002) 2013-07-30T18:41:15Z 2013-07-30T18:41:15Z 2013-04 2013-01 Article http://purl.org/eprint/type/JournalArticle 00036951 1077-3118 http://hdl.handle.net/1721.1/79733 Wang, Xiaoxin et al. “Large Inherent Optical Gain from the Direct Gap Transition of Ge Thin Films.” Applied Physics Letters 102.13 (2013): 131116. © 2013 American Institute of Physics https://orcid.org/0000-0002-3913-6189 en_US http://dx.doi.org/10.1063/1.4800015 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT web domain |
| spellingShingle | Wang, Xiaoxin Kimerling, Lionel C. Michel, Jurgen Liu, Jifeng Large inherent optical gain from the direct gap transition of Ge thin films |
| title | Large inherent optical gain from the direct gap transition of Ge thin films |
| title_full | Large inherent optical gain from the direct gap transition of Ge thin films |
| title_fullStr | Large inherent optical gain from the direct gap transition of Ge thin films |
| title_full_unstemmed | Large inherent optical gain from the direct gap transition of Ge thin films |
| title_short | Large inherent optical gain from the direct gap transition of Ge thin films |
| title_sort | large inherent optical gain from the direct gap transition of ge thin films |
| url | http://hdl.handle.net/1721.1/79733 https://orcid.org/0000-0002-3913-6189 |
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