Direct band gap narrowing in highly doped Ge
Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration is observed. We propose a first order phenomenological model for band ga...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2013
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| Online Access: | http://hdl.handle.net/1721.1/79738 https://orcid.org/0000-0003-2954-8005 https://orcid.org/0000-0002-3913-6189 |
| _version_ | 1826217237204172800 |
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| author | Han, Zhaohong Cai, Yan Kimerling, Lionel C. Michel, Jurgen Camacho-Aguilera, Rodolfo Ernesto |
| author2 | MIT Materials Research Laboratory |
| author_facet | MIT Materials Research Laboratory Han, Zhaohong Cai, Yan Kimerling, Lionel C. Michel, Jurgen Camacho-Aguilera, Rodolfo Ernesto |
| author_sort | Han, Zhaohong |
| collection | MIT |
| description | Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration is observed. We propose a first order phenomenological model for band gap narrowing based on two parameters whose values for Ge are E[subscript BGN] = 0.013 eV and Δ[subscript BGN] = 10[superscript −21] eV/cm[superscript −3]. The application of these results to non-invasive determination of the active carrier concentration in submicron areas in n-type Ge structures is demonstrated. |
| first_indexed | 2024-09-23T17:00:09Z |
| format | Article |
| id | mit-1721.1/79738 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T17:00:09Z |
| publishDate | 2013 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/797382022-09-29T23:00:13Z Direct band gap narrowing in highly doped Ge Han, Zhaohong Cai, Yan Kimerling, Lionel C. Michel, Jurgen Camacho-Aguilera, Rodolfo Ernesto MIT Materials Research Laboratory Massachusetts Institute of Technology. Department of Materials Science and Engineering Camacho-Aguilera, Rodolfo Ernesto Han, Zhaohong Cai, Yan Kimerling, Lionel C. Michel, Jurgen Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration is observed. We propose a first order phenomenological model for band gap narrowing based on two parameters whose values for Ge are E[subscript BGN] = 0.013 eV and Δ[subscript BGN] = 10[superscript −21] eV/cm[superscript −3]. The application of these results to non-invasive determination of the active carrier concentration in submicron areas in n-type Ge structures is demonstrated. United States. Air Force Office of Scientific Research. Multidisciplinary University Research Initiative (Si-Based Laser Initiative) APIC Corporation. Fully LASER Integrated Photonics (FLIP) Program 2013-07-31T14:58:25Z 2013-07-31T14:58:25Z 2013-04 2013-01 Article http://purl.org/eprint/type/JournalArticle 00036951 1077-3118 http://hdl.handle.net/1721.1/79738 Camacho-Aguilera, Rodolfo et al. “Direct Band Gap Narrowing in Highly Doped Ge.” Applied Physics Letters 102.15 (2013): 152106. © 2013 AIP Publishing LLC https://orcid.org/0000-0003-2954-8005 https://orcid.org/0000-0002-3913-6189 en_US http://dx.doi.org/10.1063/1.4802199 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT web domain |
| spellingShingle | Han, Zhaohong Cai, Yan Kimerling, Lionel C. Michel, Jurgen Camacho-Aguilera, Rodolfo Ernesto Direct band gap narrowing in highly doped Ge |
| title | Direct band gap narrowing in highly doped Ge |
| title_full | Direct band gap narrowing in highly doped Ge |
| title_fullStr | Direct band gap narrowing in highly doped Ge |
| title_full_unstemmed | Direct band gap narrowing in highly doped Ge |
| title_short | Direct band gap narrowing in highly doped Ge |
| title_sort | direct band gap narrowing in highly doped ge |
| url | http://hdl.handle.net/1721.1/79738 https://orcid.org/0000-0003-2954-8005 https://orcid.org/0000-0002-3913-6189 |
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