An electrically pumped germanium laser
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x10[superscript 19]cm[superscript −3] is achieved. A Germanium gain s...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Optical Society of America
2013
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| Online Access: | http://hdl.handle.net/1721.1/79741 https://orcid.org/0000-0002-8564-3536 https://orcid.org/0000-0002-3913-6189 |
| Summary: | Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x10[superscript 19]cm[superscript −3] is achieved. A Germanium gain spectrum of nearly 200nm is observed. |
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