An electrically pumped germanium laser

Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x10[superscript 19]cm[superscript −3] is achieved. A Germanium gain s...

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Main Authors: Cai, Yan, Bessette, Jonathan T., Romagnoli, Marco, Kimerling, Lionel C., Michel, Jurgen, Camacho-Aguilera, Rodolfo Ernesto, Patel, Neil Sunil
Other Authors: MIT Materials Research Laboratory
Format: Article
Language:en_US
Published: Optical Society of America 2013
Online Access:http://hdl.handle.net/1721.1/79741
https://orcid.org/0000-0002-8564-3536
https://orcid.org/0000-0002-3913-6189
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author Cai, Yan
Bessette, Jonathan T.
Romagnoli, Marco
Kimerling, Lionel C.
Michel, Jurgen
Camacho-Aguilera, Rodolfo Ernesto
Patel, Neil Sunil
author2 MIT Materials Research Laboratory
author_facet MIT Materials Research Laboratory
Cai, Yan
Bessette, Jonathan T.
Romagnoli, Marco
Kimerling, Lionel C.
Michel, Jurgen
Camacho-Aguilera, Rodolfo Ernesto
Patel, Neil Sunil
author_sort Cai, Yan
collection MIT
description Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x10[superscript 19]cm[superscript −3] is achieved. A Germanium gain spectrum of nearly 200nm is observed.
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spelling mit-1721.1/797412022-09-23T11:14:56Z An electrically pumped germanium laser Cai, Yan Bessette, Jonathan T. Romagnoli, Marco Kimerling, Lionel C. Michel, Jurgen Camacho-Aguilera, Rodolfo Ernesto Patel, Neil Sunil MIT Materials Research Laboratory Massachusetts Institute of Technology. Department of Materials Science and Engineering Camacho-Aguilera, Rodolfo Ernesto Cai, Yan Patel, Neil Sunil Bessette, Jonathan T. Romagnoli, Marco Kimerling, Lionel C Michel, Jurgen Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x10[superscript 19]cm[superscript −3] is achieved. A Germanium gain spectrum of nearly 200nm is observed. APIC Corporation. Fully LASER Integrated Photonics (FLIP) Program Naval Air Warfare Center (U.S.). Aircraft Division (OTA N00421-03-9-002) National Science Foundation (U.S.). Graduate Research Fellowship Program (Award 1122374) 2013-07-31T15:07:40Z 2013-07-31T15:07:40Z 2012-05 2012-04 Article http://purl.org/eprint/type/JournalArticle 1094-4087 http://hdl.handle.net/1721.1/79741 Camacho-Aguilera, Rodolfo E. et al. “An Electrically Pumped Germanium Laser.” Optics Express 20.10 (2012): 11316. © 2012 OSA https://orcid.org/0000-0002-8564-3536 https://orcid.org/0000-0002-3913-6189 en_US http://dx.doi.org/10.1364/OE.20.011316 Optics Express Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Optical Society of America MIT web domain
spellingShingle Cai, Yan
Bessette, Jonathan T.
Romagnoli, Marco
Kimerling, Lionel C.
Michel, Jurgen
Camacho-Aguilera, Rodolfo Ernesto
Patel, Neil Sunil
An electrically pumped germanium laser
title An electrically pumped germanium laser
title_full An electrically pumped germanium laser
title_fullStr An electrically pumped germanium laser
title_full_unstemmed An electrically pumped germanium laser
title_short An electrically pumped germanium laser
title_sort electrically pumped germanium laser
url http://hdl.handle.net/1721.1/79741
https://orcid.org/0000-0002-8564-3536
https://orcid.org/0000-0002-3913-6189
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