An electrically pumped germanium laser
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x10[superscript 19]cm[superscript −3] is achieved. A Germanium gain s...
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Optical Society of America
2013
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Online Access: | http://hdl.handle.net/1721.1/79741 https://orcid.org/0000-0002-8564-3536 https://orcid.org/0000-0002-3913-6189 |
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author | Cai, Yan Bessette, Jonathan T. Romagnoli, Marco Kimerling, Lionel C. Michel, Jurgen Camacho-Aguilera, Rodolfo Ernesto Patel, Neil Sunil |
author2 | MIT Materials Research Laboratory |
author_facet | MIT Materials Research Laboratory Cai, Yan Bessette, Jonathan T. Romagnoli, Marco Kimerling, Lionel C. Michel, Jurgen Camacho-Aguilera, Rodolfo Ernesto Patel, Neil Sunil |
author_sort | Cai, Yan |
collection | MIT |
description | Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x10[superscript 19]cm[superscript −3] is achieved. A Germanium gain spectrum of nearly 200nm is observed. |
first_indexed | 2024-09-23T08:09:18Z |
format | Article |
id | mit-1721.1/79741 |
institution | Massachusetts Institute of Technology |
language | en_US |
last_indexed | 2024-09-23T08:09:18Z |
publishDate | 2013 |
publisher | Optical Society of America |
record_format | dspace |
spelling | mit-1721.1/797412022-09-23T11:14:56Z An electrically pumped germanium laser Cai, Yan Bessette, Jonathan T. Romagnoli, Marco Kimerling, Lionel C. Michel, Jurgen Camacho-Aguilera, Rodolfo Ernesto Patel, Neil Sunil MIT Materials Research Laboratory Massachusetts Institute of Technology. Department of Materials Science and Engineering Camacho-Aguilera, Rodolfo Ernesto Cai, Yan Patel, Neil Sunil Bessette, Jonathan T. Romagnoli, Marco Kimerling, Lionel C Michel, Jurgen Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output power is measured. Phosphorous doping in Germanium at a concentration over 4x10[superscript 19]cm[superscript −3] is achieved. A Germanium gain spectrum of nearly 200nm is observed. APIC Corporation. Fully LASER Integrated Photonics (FLIP) Program Naval Air Warfare Center (U.S.). Aircraft Division (OTA N00421-03-9-002) National Science Foundation (U.S.). Graduate Research Fellowship Program (Award 1122374) 2013-07-31T15:07:40Z 2013-07-31T15:07:40Z 2012-05 2012-04 Article http://purl.org/eprint/type/JournalArticle 1094-4087 http://hdl.handle.net/1721.1/79741 Camacho-Aguilera, Rodolfo E. et al. “An Electrically Pumped Germanium Laser.” Optics Express 20.10 (2012): 11316. © 2012 OSA https://orcid.org/0000-0002-8564-3536 https://orcid.org/0000-0002-3913-6189 en_US http://dx.doi.org/10.1364/OE.20.011316 Optics Express Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Optical Society of America MIT web domain |
spellingShingle | Cai, Yan Bessette, Jonathan T. Romagnoli, Marco Kimerling, Lionel C. Michel, Jurgen Camacho-Aguilera, Rodolfo Ernesto Patel, Neil Sunil An electrically pumped germanium laser |
title | An electrically pumped germanium laser |
title_full | An electrically pumped germanium laser |
title_fullStr | An electrically pumped germanium laser |
title_full_unstemmed | An electrically pumped germanium laser |
title_short | An electrically pumped germanium laser |
title_sort | electrically pumped germanium laser |
url | http://hdl.handle.net/1721.1/79741 https://orcid.org/0000-0002-8564-3536 https://orcid.org/0000-0002-3913-6189 |
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