Optical gain and lasing from band-engineered Ge-on-Si at room temperature

Optical gain and lasing from band-engineered Ge-on-Si at room temperature

We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n[superscript +] Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale electronic-photonic integration on Si.

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Príomhchruthaitheoirí: Liu, Jifeng, Sun, Xiaochen, Camacho-Aguilera, Rodolfo Ernesto, Cai, Yan, Kimerling, Lionel C., Michel, Jurgen
Rannpháirtithe: MIT Materials Research Laboratory
Formáid: Alt
Teanga:en_US
Foilsithe / Cruthaithe: Institute of Electrical and Electronics Engineers (IEEE) 2013
Rochtain ar líne:http://hdl.handle.net/1721.1/79799
https://orcid.org/0000-0002-3913-6189
Cur síos
Achoimre:We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n[superscript +] Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale electronic-photonic integration on Si.

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