Optical gain and lasing from band-engineered Ge-on-Si at room temperature
We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n[superscript +] Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale electronic-photonic integration on Si.
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2013
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| Online Access: | http://hdl.handle.net/1721.1/79799 https://orcid.org/0000-0002-3913-6189 |
| _version_ | 1811082359988027392 |
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| author | Liu, Jifeng Sun, Xiaochen Camacho-Aguilera, Rodolfo Ernesto Cai, Yan Kimerling, Lionel C. Michel, Jurgen |
| author2 | MIT Materials Research Laboratory |
| author_facet | MIT Materials Research Laboratory Liu, Jifeng Sun, Xiaochen Camacho-Aguilera, Rodolfo Ernesto Cai, Yan Kimerling, Lionel C. Michel, Jurgen |
| author_sort | Liu, Jifeng |
| collection | MIT |
| description | We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n[superscript +] Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale electronic-photonic integration on Si. |
| first_indexed | 2024-09-23T12:01:53Z |
| format | Article |
| id | mit-1721.1/79799 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:01:53Z |
| publishDate | 2013 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/797992022-10-01T07:42:30Z Optical gain and lasing from band-engineered Ge-on-Si at room temperature Liu, Jifeng Sun, Xiaochen Camacho-Aguilera, Rodolfo Ernesto Cai, Yan Kimerling, Lionel C. Michel, Jurgen MIT Materials Research Laboratory Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Microphotonics Center Liu, Jifeng Sun, Xiaochen Camacho-Aguilera, Rodolfo Ernesto Cai, Yan Kimerling, Lionel C. Michel, Jurgen We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n[superscript +] Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale electronic-photonic integration on Si. United States. Air Force Office of Scientific Research. Multidisciplinary University Research Initiative 2013-08-08T13:50:12Z 2013-08-08T13:50:12Z 2010-07 Article http://purl.org/eprint/type/ConferencePaper 978-1-4244-6785-3 http://hdl.handle.net/1721.1/79799 Jifeng, Liu et al. "Optical gain and lasing from band-engineered Ge-on-Si at room temperature." 15th OptoElectronics and Communications Conference (OECC2010) Technical Digest, July 2010, Sapporo Convention Center, Japan. Copyright © 2010, by The Institute of Electronics, Information and Communication Engineers https://orcid.org/0000-0002-3913-6189 en_US http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5588537 Proceedings of the 2010 15th OptoeElectronics and Communications Conference (OECC) Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers (IEEE) MIT web domain |
| spellingShingle | Liu, Jifeng Sun, Xiaochen Camacho-Aguilera, Rodolfo Ernesto Cai, Yan Kimerling, Lionel C. Michel, Jurgen Optical gain and lasing from band-engineered Ge-on-Si at room temperature |
| title | Optical gain and lasing from band-engineered Ge-on-Si at room temperature |
| title_full | Optical gain and lasing from band-engineered Ge-on-Si at room temperature |
| title_fullStr | Optical gain and lasing from band-engineered Ge-on-Si at room temperature |
| title_full_unstemmed | Optical gain and lasing from band-engineered Ge-on-Si at room temperature |
| title_short | Optical gain and lasing from band-engineered Ge-on-Si at room temperature |
| title_sort | optical gain and lasing from band engineered ge on si at room temperature |
| url | http://hdl.handle.net/1721.1/79799 https://orcid.org/0000-0002-3913-6189 |
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