Modeling poly-silicon gate depletion in submicron MOS devices
Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2013
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| Online Access: | http://hdl.handle.net/1721.1/80100 |
| _version_ | 1826199537468833792 |
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| author | Li, James Chingwei, 1975- |
| author2 | Stephen D. Senturia. |
| author_facet | Stephen D. Senturia. Li, James Chingwei, 1975- |
| author_sort | Li, James Chingwei, 1975- |
| collection | MIT |
| description | Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999. |
| first_indexed | 2024-09-23T11:21:55Z |
| format | Thesis |
| id | mit-1721.1/80100 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T11:21:55Z |
| publishDate | 2013 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/801002019-04-12T13:59:42Z Modeling poly-silicon gate depletion in submicron MOS devices Modeling poly-silicon gate depletion in submicron metal oxide semiconductor devices Li, James Chingwei, 1975- Stephen D. Senturia. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science Electrical Engineering and Computer Science Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999. Includes bibliographical references (p. 119-121). by James Chingwei Li. M.Eng. 2013-08-22T18:51:28Z 2013-08-22T18:51:28Z 1999 1999 Thesis http://hdl.handle.net/1721.1/80100 43521403 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 148 p. application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science Li, James Chingwei, 1975- Modeling poly-silicon gate depletion in submicron MOS devices |
| title | Modeling poly-silicon gate depletion in submicron MOS devices |
| title_full | Modeling poly-silicon gate depletion in submicron MOS devices |
| title_fullStr | Modeling poly-silicon gate depletion in submicron MOS devices |
| title_full_unstemmed | Modeling poly-silicon gate depletion in submicron MOS devices |
| title_short | Modeling poly-silicon gate depletion in submicron MOS devices |
| title_sort | modeling poly silicon gate depletion in submicron mos devices |
| topic | Electrical Engineering and Computer Science |
| url | http://hdl.handle.net/1721.1/80100 |
| work_keys_str_mv | AT lijameschingwei1975 modelingpolysilicongatedepletioninsubmicronmosdevices AT lijameschingwei1975 modelingpolysilicongatedepletioninsubmicronmetaloxidesemiconductordevices |