Modeling poly-silicon gate depletion in submicron MOS devices

Modeling poly-silicon gate depletion in submicron MOS devices

Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.

Bibliographic Details
Main Author:	Li, James Chingwei, 1975-
Other Authors:	Stephen D. Senturia.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2013
Subjects:	Electrical Engineering and Computer Science
Online Access:	http://hdl.handle.net/1721.1/80100

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