Electron-beam-induced deposition of 3-nm-half-pitch patterns on bulk Si
This paper demonstrates electron-beam-induced deposition of few-nm-width dense features on bulk samples by using a scanning electron-beam lithography system. To optimize the resultant features, three steps were taken: (1) features were exposed in a repetitive sequence, so as to build up the deposite...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Vacuum Society (AVS)
2013
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| Online Access: | http://hdl.handle.net/1721.1/80770 https://orcid.org/0000-0001-7453-9031 |
| Summary: | This paper demonstrates electron-beam-induced deposition of few-nm-width dense features on bulk samples by using a scanning electron-beam lithography system. To optimize the resultant features, three steps were taken: (1) features were exposed in a repetitive sequence, so as to build up the deposited features gradually across the entire pattern, and thus avoid proximity effects; (2) an additional delay was added between exposures to permit diffusion of reactants into the exposed area; and (3) the exposures were phase-synchronized to the dominant noise source (the 50-Hz line voltage) to minimize the effect of noise. The reasons these steps led to significant improvements in patterning resolution are discussed. |
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