| _version_ |
1826199176641249280
|
| author2 |
Massachusetts Institute of Technology. Department of Materials Science and Engineering
|
| author_facet |
Massachusetts Institute of Technology. Department of Materials Science and Engineering
|
| collection |
MIT
|
| description |
We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with III-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high mobility material for III-V MOS, and research on an in-situ MOCVD Al[subscript 2]O[subscript 3]/GaAs process for III-V MOS.
|
| first_indexed |
2024-09-23T11:15:56Z
|
| format |
Article
|
| id |
mit-1721.1/80884
|
| institution |
Massachusetts Institute of Technology
|
| language |
en_US
|
| last_indexed |
2024-09-23T11:15:56Z
|
| publishDate |
2013
|
| publisher |
Institute of Electrical and Electronics Engineers (IEEE)
|
| record_format |
dspace
|
| spelling |
mit-1721.1/808842024-03-22T17:19:44Z Monolithic III-V/Si Integration Massachusetts Institute of Technology. Department of Materials Science and Engineering We summarize our work on creating substrate platforms, processes, and devices for the monolithic integration of silicon CMOS circuits with III-V optical and electronic devices. Visible LEDs and InP HBTs have been integrated on silicon materials platforms that lend themselves to process integration within silicon fabrication facilities. We also summarize research on tensile Ge, which could be a high mobility material for III-V MOS, and research on an in-situ MOCVD Al[subscript 2]O[subscript 3]/GaAs process for III-V MOS. United States. Army Research Office Singapore-MIT Alliance Microelectronics Advanced Research Corporation (MARCO) Semiconductor Research Corporation. Interconnect Focus Center United States. Defense Advanced Research Projects Agency. COSMOS Program 2013-09-24T17:53:03Z 2013-09-24T17:53:03Z 2008-10 Article http://purl.org/eprint/type/ConferencePaper 978-1-4244-2186-2 978-1-4244-2185-5 http://hdl.handle.net/1721.1/80884 Fitzgerald, E.A. et al. “Monolithic III-V/Si Integration.” IEEE, 2008. 1421–1424. © Copyright 2008 IEEE en_US http://dx.doi.org/10.1109/ICSICT.2008.4734819 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers (IEEE) IEEE
|
| spellingShingle |
Monolithic III-V/Si Integration
|
| title |
Monolithic III-V/Si Integration
|
| title_full |
Monolithic III-V/Si Integration
|
| title_fullStr |
Monolithic III-V/Si Integration
|
| title_full_unstemmed |
Monolithic III-V/Si Integration
|
| title_short |
Monolithic III-V/Si Integration
|
| title_sort |
monolithic iii v si integration
|
| url |
http://hdl.handle.net/1721.1/80884
|