High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate

High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate

We present recent results on the direct heterogeneous integration of InP HBTs and Si CMOS on a silicon template wafer or SOLES (Silicon On Lattice Engineered Substrate). InP HBTs whose performance are comparable to HBTs on the native InP substrates have been repeatedly achieved. 100% heterogeneous i...

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Bibliographic Details
Main Authors: Kazior, T. E., LaRoche, J. R., Urteaga, M., Bergman, J., Choe, M. J., Lee, K. J., Seong, T., Seo, M., Yen, A., Lubyshev, D., Fastenau, J. M., Liu, W. K., Smith, D., Clark, D., Thompson, R., Bulsara, Mayank, Fitzgerald, Eugene A., Drazek, C., Guiot, E.
Other Authors: MIT Materials Research Laboratory
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2013
Online Access:http://hdl.handle.net/1721.1/81316
https://orcid.org/0000-0002-1891-1959
Description
Summary:We present recent results on the direct heterogeneous integration of InP HBTs and Si CMOS on a silicon template wafer or SOLES (Silicon On Lattice Engineered Substrate). InP HBTs whose performance are comparable to HBTs on the native InP substrates have been repeatedly achieved. 100% heterogeneous interconnect yield has been achieved on daisy chain test structures with CMOS-InP HBT spacing (interconnect length) as small as 2.5um. In DARPA COSMOS Phase 1 we designed and fabricated a differential amplifier that met the program Go/NoGo metrics with first pass design success. As the COSMOS Phase 2 demonstration vehicle we designed and fabricated a low power dissipation, high resolution, 500MHz bandwidth digital-to-analog converter (DAC).

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