Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs
We demonstrate nonlinear metamaterial split ring resonators (SRRs) on GaAs at terahertz frequencies. For SRRs on doped GaAs films, incident terahertz radiation with peak fields of ∼20–160 kV/cm drives intervalley scattering. This reduces the carrier mobility and enhances the SRR LC response due to...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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2013
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| Online Access: | http://hdl.handle.net/1721.1/82134 https://orcid.org/0000-0001-7804-5418 |
| _version_ | 1826216829853368320 |
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| author | Fan, Kebin Hwang, Harold Young Liu, Mengkun Strikwerda, Andrew C. Sternbach, Aaron Zhang, Jingdi Zhao, Xiaoguang Zhang, Xin Nelson, Keith Adam Averitt, Richard D. |
| author2 | Massachusetts Institute of Technology. Department of Chemistry |
| author_facet | Massachusetts Institute of Technology. Department of Chemistry Fan, Kebin Hwang, Harold Young Liu, Mengkun Strikwerda, Andrew C. Sternbach, Aaron Zhang, Jingdi Zhao, Xiaoguang Zhang, Xin Nelson, Keith Adam Averitt, Richard D. |
| author_sort | Fan, Kebin |
| collection | MIT |
| description | We demonstrate nonlinear metamaterial split ring resonators (SRRs) on GaAs at terahertz frequencies. For SRRs on doped GaAs films, incident terahertz radiation with peak fields of ∼20–160 kV/cm drives intervalley scattering. This reduces the carrier mobility and enhances the SRR LC response due to a conductivity decrease in the doped thin film. Above ∼160 kV/cm, electric field enhancement within the SRR gaps leads to efficient impact ionization, increasing the carrier density and the conductivity which, in turn, suppresses the SRR resonance. We demonstrate an increase of up to 10 orders of magnitude in the carrier density in the SRR gaps on semi-insulating GaAs. Furthermore, we show that the effective permittivity can be swept from negative to positive values with an increasing terahertz field strength in the impact ionization regime, enabling new possibilities for nonlinear metamaterials. |
| first_indexed | 2024-09-23T16:53:47Z |
| format | Article |
| id | mit-1721.1/82134 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T16:53:47Z |
| publishDate | 2013 |
| record_format | dspace |
| spelling | mit-1721.1/821342022-10-03T09:00:21Z Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs Fan, Kebin Hwang, Harold Young Liu, Mengkun Strikwerda, Andrew C. Sternbach, Aaron Zhang, Jingdi Zhao, Xiaoguang Zhang, Xin Nelson, Keith Adam Averitt, Richard D. Massachusetts Institute of Technology. Department of Chemistry Hwang, Harold Young Nelson, Keith Adam We demonstrate nonlinear metamaterial split ring resonators (SRRs) on GaAs at terahertz frequencies. For SRRs on doped GaAs films, incident terahertz radiation with peak fields of ∼20–160 kV/cm drives intervalley scattering. This reduces the carrier mobility and enhances the SRR LC response due to a conductivity decrease in the doped thin film. Above ∼160 kV/cm, electric field enhancement within the SRR gaps leads to efficient impact ionization, increasing the carrier density and the conductivity which, in turn, suppresses the SRR resonance. We demonstrate an increase of up to 10 orders of magnitude in the carrier density in the SRR gaps on semi-insulating GaAs. Furthermore, we show that the effective permittivity can be swept from negative to positive values with an increasing terahertz field strength in the impact ionization regime, enabling new possibilities for nonlinear metamaterials. United States. Office of Naval Research (ONR Grant No. N00014-09-1-1103) United States. Air Force Office of Scientific Research (AFOSR Grant No. FA9550-09- 1-0708) United States. Defense Threat Reduction Agency (C&B Technologies Directorate) 2013-11-15T18:18:07Z 2013-11-15T18:18:07Z 2013-05 2013-03 Article http://purl.org/eprint/type/JournalArticle 0031-9007 1079-7114 http://hdl.handle.net/1721.1/82134 Fan, Kebin, Harold Y. Hwang, Mengkun Liu, Andrew C. Strikwerda, Aaron Sternbach, Jingdi Zhang, Xiaoguang Zhao, Xin Zhang, Keith A. Nelson, and Richard D. Averitt. Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs. Physical Review Letters 110, no. 21 (May 2013). https://orcid.org/0000-0001-7804-5418 en_US http://dx.doi.org/10.1103/PhysRevLett.110.217404 Physical Review Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf APS |
| spellingShingle | Fan, Kebin Hwang, Harold Young Liu, Mengkun Strikwerda, Andrew C. Sternbach, Aaron Zhang, Jingdi Zhao, Xiaoguang Zhang, Xin Nelson, Keith Adam Averitt, Richard D. Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs |
| title | Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs |
| title_full | Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs |
| title_fullStr | Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs |
| title_full_unstemmed | Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs |
| title_short | Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs |
| title_sort | nonlinear terahertz metamaterials via field enhanced carrier dynamics in gaas |
| url | http://hdl.handle.net/1721.1/82134 https://orcid.org/0000-0001-7804-5418 |
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