Iron (III) Chloride doping of large-area chemical vapor deposition graphene

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.

书目详细资料
主要作者: Song, Yi, Ph. D. Massachusetts Institute of Technology
其他作者: Jing Kong.
格式: Thesis
语言:eng
出版: Massachusetts Institute of Technology 2013
主题:
在线阅读:http://hdl.handle.net/1721.1/82384
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author Song, Yi, Ph. D. Massachusetts Institute of Technology
author2 Jing Kong.
author_facet Jing Kong.
Song, Yi, Ph. D. Massachusetts Institute of Technology
author_sort Song, Yi, Ph. D. Massachusetts Institute of Technology
collection MIT
description Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.
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spelling mit-1721.1/823842019-04-11T07:07:27Z Iron (III) Chloride doping of large-area chemical vapor deposition graphene Iron Chloride doping of CVD graphene for transparent electrodes Song, Yi, Ph. D. Massachusetts Institute of Technology Jing Kong. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science. Electrical Engineering and Computer Science. Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013. Title as it appears in MIT Commencement Exercises program, June 2013: Iron Chloride doping of CVD graphene for transparent electrodes. Cataloged from PDF version of thesis. Includes bibliographical references (p. 39-40). Chemical doping is an effective method of reducing the sheet resistance of graphene. This thesis aims to develop an effective method of doping large area Chemical Vapor Deposition (CVD) graphene using Iron (III) Chloride (FeCl 3). It is shown that evaporating FeCl3 can increase the carrier concentration of monolayer graphene to greater than 7x1 0 3CM2 and achieve resistances as low 72[Omega]/sq. We also evaluate other important properties of the doped graphene such as surface cleanliness, air stability, and solvent stability. Furthermore, we compare FeCl3 to three other common dopants: Gold (III) Chloride (AuCl3), Nitric Acid (I-N0 3), and TFSA ((CF 3SO2)2NH). We show that compared to these dopants, FeCl3 can not only achieve better sheet resistance but also has other key advantages including better solvent stability and better heat stability. by Yi Song. S.M. 2013-11-18T19:16:29Z 2013-11-18T19:16:29Z 2013 2013 Thesis http://hdl.handle.net/1721.1/82384 862075472 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 40 p. application/pdf Massachusetts Institute of Technology
spellingShingle Electrical Engineering and Computer Science.
Song, Yi, Ph. D. Massachusetts Institute of Technology
Iron (III) Chloride doping of large-area chemical vapor deposition graphene
title Iron (III) Chloride doping of large-area chemical vapor deposition graphene
title_full Iron (III) Chloride doping of large-area chemical vapor deposition graphene
title_fullStr Iron (III) Chloride doping of large-area chemical vapor deposition graphene
title_full_unstemmed Iron (III) Chloride doping of large-area chemical vapor deposition graphene
title_short Iron (III) Chloride doping of large-area chemical vapor deposition graphene
title_sort iron iii chloride doping of large area chemical vapor deposition graphene
topic Electrical Engineering and Computer Science.
url http://hdl.handle.net/1721.1/82384
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