Enhancement of antimonide-based p-channel quantum-well field effect transistors using process-induced sprain

Enhancement of antimonide-based p-channel quantum-well field effect transistors using process-induced sprain

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.

Bibliographic Details
Main Author: Guo, Luke (Luke W.)
Other Authors: Jesús A. del Alamo.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2013
Subjects:
Electrical Engineering and Computer Science.
Online Access:http://hdl.handle.net/1721.1/82389

Similar Items

Similar Items