A compact transport and charge model for GaN-based high electron mobility transistors for RF applications

A compact transport and charge model for GaN-based high electron mobility transistors for RF applications

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2013.

Bibliographic Details
Main Author:	Radhakrishna, Ujwal
Other Authors:	Dimitri A. Antoniadis.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2013
Subjects:	Electrical Engineering and Computer Science.
Online Access:	http://hdl.handle.net/1721.1/82394

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