Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice
We have measured the lifetimes of two zone-center longitudinal acoustic phonon modes, at 320 and 640 GHz, in a 14 nm GaAs/2 nm AlAs superlattice structure. By comparing measurements at 296 and 79 K we separate the intrinsic contribution to phonon lifetime determined by phonon–phonon scattering from...
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| Format: | Article |
| Language: | en_US |
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IOP Publishing
2013
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| Online Access: | http://hdl.handle.net/1721.1/82545 https://orcid.org/0000-0002-1891-1959 https://orcid.org/0000-0002-3968-8530 https://orcid.org/0000-0001-7804-5418 |
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| author | Hofmann, Felix Garg, Jivtesh Maznev, Alexei Jandl, Adam Christopher Bulsara, Mayank Fitzgerald, Eugene A. Chen, Gang Nelson, Keith Adam |
| author2 | Massachusetts Institute of Technology. Materials Processing Center |
| author_facet | Massachusetts Institute of Technology. Materials Processing Center Hofmann, Felix Garg, Jivtesh Maznev, Alexei Jandl, Adam Christopher Bulsara, Mayank Fitzgerald, Eugene A. Chen, Gang Nelson, Keith Adam |
| author_sort | Hofmann, Felix |
| collection | MIT |
| description | We have measured the lifetimes of two zone-center longitudinal acoustic phonon modes, at 320 and 640 GHz, in a 14 nm GaAs/2 nm AlAs superlattice structure. By comparing measurements at 296 and 79 K we separate the intrinsic contribution to phonon lifetime determined by phonon–phonon scattering from the extrinsic contribution due to defects and interface roughness. At 296 K, the 320 GHz phonon lifetime has approximately equal contributions from intrinsic and extrinsic scattering, whilst at 640 GHz it is dominated by extrinsic effects. These measurements are compared with intrinsic and extrinsic scattering rates in the superlattice obtained from first-principles lattice dynamics calculations. The calculated room-temperature intrinsic lifetime of longitudinal phonons at 320 GHz is in agreement with the experimentally measured value of 0.9 ns. The model correctly predicts the transition from predominantly intrinsic to predominantly extrinsic scattering; however the predicted transition occurs at higher frequencies. Our analysis indicates that the 'interfacial atomic disorder' model is not entirely adequate and that the observed frequency dependence of the extrinsic scattering rate is likely to be determined by a finite correlation length of interface roughness. |
| first_indexed | 2024-09-23T09:39:48Z |
| format | Article |
| id | mit-1721.1/82545 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T09:39:48Z |
| publishDate | 2013 |
| publisher | IOP Publishing |
| record_format | dspace |
| spelling | mit-1721.1/825452022-09-26T12:54:26Z Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice Hofmann, Felix Garg, Jivtesh Maznev, Alexei Jandl, Adam Christopher Bulsara, Mayank Fitzgerald, Eugene A. Chen, Gang Nelson, Keith Adam Massachusetts Institute of Technology. Materials Processing Center Massachusetts Institute of Technology. Department of Chemistry Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Department of Mechanical Engineering Hofmann, Felix Garg, Jivtesh Maznev, Alexei Jandl, Adam Christopher Bulsara, Mayank Fitzgerald, Eugene A. Chen, Gang Nelson, Keith Adam We have measured the lifetimes of two zone-center longitudinal acoustic phonon modes, at 320 and 640 GHz, in a 14 nm GaAs/2 nm AlAs superlattice structure. By comparing measurements at 296 and 79 K we separate the intrinsic contribution to phonon lifetime determined by phonon–phonon scattering from the extrinsic contribution due to defects and interface roughness. At 296 K, the 320 GHz phonon lifetime has approximately equal contributions from intrinsic and extrinsic scattering, whilst at 640 GHz it is dominated by extrinsic effects. These measurements are compared with intrinsic and extrinsic scattering rates in the superlattice obtained from first-principles lattice dynamics calculations. The calculated room-temperature intrinsic lifetime of longitudinal phonons at 320 GHz is in agreement with the experimentally measured value of 0.9 ns. The model correctly predicts the transition from predominantly intrinsic to predominantly extrinsic scattering; however the predicted transition occurs at higher frequencies. Our analysis indicates that the 'interfacial atomic disorder' model is not entirely adequate and that the observed frequency dependence of the extrinsic scattering rate is likely to be determined by a finite correlation length of interface roughness. United States. Dept. of Energy. Office of Basic Energy Sciences (Award DE-FG02-00ER15087) United States. Dept. of Energy. Office of Basic Energy Sciences (Award DE-SC0001299/DE-FG02-09ER46577) 2013-11-22T15:56:52Z 2013-11-22T15:56:52Z 2013-07 2013-06 Article http://purl.org/eprint/type/JournalArticle 0953-8984 1361-648X http://hdl.handle.net/1721.1/82545 Hofmann, F, J Garg, A A Maznev, A Jandl, M Bulsara, E A Fitzgerald, G Chen, and K A Nelson. “Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice.” Journal of Physics: Condensed Matter 25, no. 29 (July 24, 2013): 295401. https://orcid.org/0000-0002-1891-1959 https://orcid.org/0000-0002-3968-8530 https://orcid.org/0000-0001-7804-5418 en_US http://dx.doi.org/10.1088/0953-8984/25/29/295401 Journal of Physics: Condensed Matter Creative Commons Attribution-Noncommercial-Share Alike 3.0 http://creativecommons.org/licenses/by-nc-sa/3.0/ application/pdf IOP Publishing arXiv |
| spellingShingle | Hofmann, Felix Garg, Jivtesh Maznev, Alexei Jandl, Adam Christopher Bulsara, Mayank Fitzgerald, Eugene A. Chen, Gang Nelson, Keith Adam Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice |
| title | Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice |
| title_full | Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice |
| title_fullStr | Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice |
| title_full_unstemmed | Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice |
| title_short | Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice |
| title_sort | intrinsic to extrinsic phonon lifetime transition in a gaas alas superlattice |
| url | http://hdl.handle.net/1721.1/82545 https://orcid.org/0000-0002-1891-1959 https://orcid.org/0000-0002-3968-8530 https://orcid.org/0000-0001-7804-5418 |
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