A high carrier injection terahertz quantum cascade laser based on indirectly pumped scheme
A Terahertz quantum cascade laser with a rather high injection coupling strength based on an indirectly pumped scheme is designed and experimentally implemented. To effectively suppress leakage current, the chosen quantum cascade module of the device is based on a five-well GaAs/Al[subscript 0.25]Ga...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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American Institute of Physics
2014
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| Online Access: | http://hdl.handle.net/1721.1/86885 https://orcid.org/0000-0003-1982-4053 |
| _version_ | 1811087357652238336 |
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| author | Razavipour, S. G. Dupont, E. Chan, Chun Wang Ivan Xu, C. Wasilewski, Z. R. Laframboise, Sylvain R. Hu, Qing Ban, D. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Razavipour, S. G. Dupont, E. Chan, Chun Wang Ivan Xu, C. Wasilewski, Z. R. Laframboise, Sylvain R. Hu, Qing Ban, D. |
| author_sort | Razavipour, S. G. |
| collection | MIT |
| description | A Terahertz quantum cascade laser with a rather high injection coupling strength based on an indirectly pumped scheme is designed and experimentally implemented. To effectively suppress leakage current, the chosen quantum cascade module of the device is based on a five-well GaAs/Al[subscript 0.25]Ga[subscript 0.75]As structure. The device lases up to 151 K with a lasing frequency of 2.67 THz. This study shows that the effect of higher energy states in carrier transport and the long-range tunnel coupling between states that belong to non-neighbouring modules have to be considered in quantum design of structures with a narrow injector barrier. Moreover, the effect of interface roughness scattering between the lasing states on threshold current is crucial. |
| first_indexed | 2024-09-23T13:44:49Z |
| format | Article |
| id | mit-1721.1/86885 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T13:44:49Z |
| publishDate | 2014 |
| publisher | American Institute of Physics |
| record_format | dspace |
| spelling | mit-1721.1/868852022-10-01T16:52:04Z A high carrier injection terahertz quantum cascade laser based on indirectly pumped scheme Razavipour, S. G. Dupont, E. Chan, Chun Wang Ivan Xu, C. Wasilewski, Z. R. Laframboise, Sylvain R. Hu, Qing Ban, D. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Research Laboratory of Electronics Chan, Chun Wang Ivan Hu, Qing A Terahertz quantum cascade laser with a rather high injection coupling strength based on an indirectly pumped scheme is designed and experimentally implemented. To effectively suppress leakage current, the chosen quantum cascade module of the device is based on a five-well GaAs/Al[subscript 0.25]Ga[subscript 0.75]As structure. The device lases up to 151 K with a lasing frequency of 2.67 THz. This study shows that the effect of higher energy states in carrier transport and the long-range tunnel coupling between states that belong to non-neighbouring modules have to be considered in quantum design of structures with a narrow injector barrier. Moreover, the effect of interface roughness scattering between the lasing states on threshold current is crucial. Natural Sciences and Engineering Research Council of Canada Canadian Foundation for Innovation CMC Microsystems (Firm) Ontario Research Foundation 2014-05-08T20:40:58Z 2014-05-08T20:40:58Z 2014-01 Article http://purl.org/eprint/type/JournalArticle 0003-6951 1077-3118 http://hdl.handle.net/1721.1/86885 Razavipour, S. G., E. Dupont, C. W. I. Chan, C. Xu, Z. R. Wasilewski, S. R. Laframboise, Q. Hu, and D. Ban. “A High Carrier Injection Terahertz Quantum Cascade Laser Based on Indirectly Pumped Scheme.” Appl. Phys. Lett. 104, no. 4 (January 27, 2014): 041111. https://orcid.org/0000-0003-1982-4053 en_US http://dx.doi.org/10.1063/1.4862177 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics MIT web domain |
| spellingShingle | Razavipour, S. G. Dupont, E. Chan, Chun Wang Ivan Xu, C. Wasilewski, Z. R. Laframboise, Sylvain R. Hu, Qing Ban, D. A high carrier injection terahertz quantum cascade laser based on indirectly pumped scheme |
| title | A high carrier injection terahertz quantum cascade laser based on indirectly pumped scheme |
| title_full | A high carrier injection terahertz quantum cascade laser based on indirectly pumped scheme |
| title_fullStr | A high carrier injection terahertz quantum cascade laser based on indirectly pumped scheme |
| title_full_unstemmed | A high carrier injection terahertz quantum cascade laser based on indirectly pumped scheme |
| title_short | A high carrier injection terahertz quantum cascade laser based on indirectly pumped scheme |
| title_sort | high carrier injection terahertz quantum cascade laser based on indirectly pumped scheme |
| url | http://hdl.handle.net/1721.1/86885 https://orcid.org/0000-0003-1982-4053 |
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