A Technology Overview of the PowerChip Development Program

A Technology Overview of the PowerChip Development Program

The PowerChip research program is developing technologies to radically improve the size, integration, and performance of power electronics operating at up to grid-scale voltages (e.g., up to 200V) and low-to-moderate power levels (e.g., up to 50W) and demonstrating the technologies in a high-efficie...

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Bibliographic Details
Main Authors: Araghchini, Mohammad, Chen, Jun, Doan-Nguyen, Vicky, Harburg, Daniel V., Jin, Donghyun, Kim, Jungkwun, Kim, Min Soo, Lim, Seungbum, Lu, Bin, Piedra, Daniel, Qiu, Jizheng, Ranson, John, Sun, Min, Yu, Xuehong, Yun, Hongseok, Allen, Mark G., DesGroseilliers, Gary, Herrault, Florian, Lang, Jeffrey H., Levey, Christopher G., Murray, Christopher B., Perreault, David J., Sullivan, Charles R., del Alamo, Jesus A., Otten, David M., Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers (IEEE) 2014
Online Access:http://hdl.handle.net/1721.1/86982
https://orcid.org/0000-0003-4858-8264
https://orcid.org/0000-0002-5765-4369
https://orcid.org/0000-0002-0746-6191
https://orcid.org/0000-0002-8104-9097
https://orcid.org/0000-0002-2190-563X
https://orcid.org/0000-0003-3986-209X
https://orcid.org/0000-0002-6589-9948
https://orcid.org/0000-0003-0313-8243
https://orcid.org/0000-0003-2208-0665
https://orcid.org/0000-0001-7022-4817
Description
Summary:The PowerChip research program is developing technologies to radically improve the size, integration, and performance of power electronics operating at up to grid-scale voltages (e.g., up to 200V) and low-to-moderate power levels (e.g., up to 50W) and demonstrating the technologies in a high-efficiency light-emitting diode driver, as an example application. This paper presents an overview of the program and of the progress toward meeting the program goals. Key program aspects and progress in advanced nitride power devices and device reliability, integrated high-frequency magnetics and magnetic materials, and high-frequency converter architectures are summarized.

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