Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes
This work examines the enhancement of current on/off ratio in field effect transistordevices with bundled single-walled carbon nanotubes(CNTs) by incorporating a substrate etching step before the electrical cutting for metallic CNT elimination. The etching step prevents the damaging of the semicondu...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2014
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| Online Access: | http://hdl.handle.net/1721.1/87047 https://orcid.org/0000-0003-0551-1208 |
| _version_ | 1826198930239520768 |
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| author | Feng, Y. Lee, K. Farhat, Hootan Kong, Jing |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Feng, Y. Lee, K. Farhat, Hootan Kong, Jing |
| author_sort | Feng, Y. |
| collection | MIT |
| description | This work examines the enhancement of current on/off ratio in field effect transistordevices with bundled single-walled carbon nanotubes(CNTs) by incorporating a substrate etching step before the electrical cutting for metallic CNT elimination. The etching step prevents the damaging of the semiconducting CNTs while burning off the metallic ones by electrical current. By further incorporating a repeated gate voltage sweeping step, devices with low I[subscript off] (less than 2 nA) and high I[subscript on]/I[subscript off], which is one to five orders of magnitude larger than before etching/cutting combination process, can be obtained. |
| first_indexed | 2024-09-23T11:12:07Z |
| format | Article |
| id | mit-1721.1/87047 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T11:12:07Z |
| publishDate | 2014 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/870472022-09-27T17:47:59Z Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes Feng, Y. Lee, K. Farhat, Hootan Kong, Jing Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Materials Science and Engineering Lee, K. Farhat, Hootan Kong, Jing This work examines the enhancement of current on/off ratio in field effect transistordevices with bundled single-walled carbon nanotubes(CNTs) by incorporating a substrate etching step before the electrical cutting for metallic CNT elimination. The etching step prevents the damaging of the semiconducting CNTs while burning off the metallic ones by electrical current. By further incorporating a repeated gate voltage sweeping step, devices with low I[subscript off] (less than 2 nA) and high I[subscript on]/I[subscript off], which is one to five orders of magnitude larger than before etching/cutting combination process, can be obtained. 2014-05-19T13:13:29Z 2014-05-19T13:13:29Z 2009-11 2009-08 Article http://purl.org/eprint/type/JournalArticle 00218979 1089-7550 http://hdl.handle.net/1721.1/87047 Feng, Y., K. Lee, H. Farhat, and J. Kong. “Current On/off Ratio Enhancement of Field Effect Transistors with Bundled Carbon Nanotubes.” Journal of Applied Physics 106, no. 10 (2009): 104505. © 2009 American Institute of Physics https://orcid.org/0000-0003-0551-1208 en_US http://dx.doi.org/10.1063/1.3253737 Journal of Applied Physics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) MIT web domain |
| spellingShingle | Feng, Y. Lee, K. Farhat, Hootan Kong, Jing Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes |
| title | Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes |
| title_full | Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes |
| title_fullStr | Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes |
| title_full_unstemmed | Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes |
| title_short | Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes |
| title_sort | current on off ratio enhancement of field effect transistors with bundled carbon nanotubes |
| url | http://hdl.handle.net/1721.1/87047 https://orcid.org/0000-0003-0551-1208 |
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