Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes

This work examines the enhancement of current on/off ratio in field effect transistordevices with bundled single-walled carbon nanotubes(CNTs) by incorporating a substrate etching step before the electrical cutting for metallic CNT elimination. The etching step prevents the damaging of the semicondu...

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Bibliographic Details
Main Authors: Feng, Y., Lee, K., Farhat, Hootan, Kong, Jing
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2014
Online Access:http://hdl.handle.net/1721.1/87047
https://orcid.org/0000-0003-0551-1208