pH sensing properties of graphene solution-gated field-effect transistors
The use of graphene grown by chemical vapor deposition to fabricate solution-gated field-effect transistors (SGFET) on different substrates is reported. SGFETs were fabricated using graphene transferred on poly(ethylene 2,6-naphthalenedicarboxylate) substrate in order to study the influence of using...
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| Format: | Article |
| Language: | en_US |
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American Institute of Physics
2014
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| Online Access: | http://hdl.handle.net/1721.1/87110 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X |
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| author | Mailly-Giacchetti, Benjamin Hsu, Allen Long Wang, Han Vinciguerra, Vincenzo Pappalardo, Francesco Occhipinti, Luigi Guidetti, Elio Coffa, Salvatore Kong, Jing Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Mailly-Giacchetti, Benjamin Hsu, Allen Long Wang, Han Vinciguerra, Vincenzo Pappalardo, Francesco Occhipinti, Luigi Guidetti, Elio Coffa, Salvatore Kong, Jing Palacios, Tomas |
| author_sort | Mailly-Giacchetti, Benjamin |
| collection | MIT |
| description | The use of graphene grown by chemical vapor deposition to fabricate solution-gated field-effect transistors (SGFET) on different substrates is reported. SGFETs were fabricated using graphene transferred on poly(ethylene 2,6-naphthalenedicarboxylate) substrate in order to study the influence of using a flexible substrate for pH sensing. Furthermore, in order to understand the influence of fabrication-related residues on top of the graphene surface, a fabrication method was developed for graphene-on-SiO2 SGFETs that enables to keep a graphene surface completely clean of any residues at the end of the fabrication. We were then able to demonstrate that the electrical response of the SGFET devices to pH does not depend either on the specific substrate on which graphene is transferred or on the existence of a moderate amount of fabrication-related residues on top of the graphene surface. These considerations simplify and ease the design and fabrication of graphene pH sensors, paving the way for developing low cost, flexible, and transparent graphene sensors on plastic. We also show that the surface transfer doping mechanism does not have significant influence on the pH sensing response. This highlights that the adsorption of hydroxyl and hydronium ions on the graphene surface due to the charging of the electrical double layer capacitance is responsible for the pH sensing mechanism. |
| first_indexed | 2024-09-23T15:04:48Z |
| format | Article |
| id | mit-1721.1/87110 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:04:48Z |
| publishDate | 2014 |
| publisher | American Institute of Physics |
| record_format | dspace |
| spelling | mit-1721.1/871102022-10-02T00:26:48Z pH sensing properties of graphene solution-gated field-effect transistors Mailly-Giacchetti, Benjamin Hsu, Allen Long Wang, Han Vinciguerra, Vincenzo Pappalardo, Francesco Occhipinti, Luigi Guidetti, Elio Coffa, Salvatore Kong, Jing Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Department of Materials Science and Engineering Mailly-Giacchetti, Benjamin Hsu, Allen Long Wang, Han Kong, Jing Palacios, Tomas The use of graphene grown by chemical vapor deposition to fabricate solution-gated field-effect transistors (SGFET) on different substrates is reported. SGFETs were fabricated using graphene transferred on poly(ethylene 2,6-naphthalenedicarboxylate) substrate in order to study the influence of using a flexible substrate for pH sensing. Furthermore, in order to understand the influence of fabrication-related residues on top of the graphene surface, a fabrication method was developed for graphene-on-SiO2 SGFETs that enables to keep a graphene surface completely clean of any residues at the end of the fabrication. We were then able to demonstrate that the electrical response of the SGFET devices to pH does not depend either on the specific substrate on which graphene is transferred or on the existence of a moderate amount of fabrication-related residues on top of the graphene surface. These considerations simplify and ease the design and fabrication of graphene pH sensors, paving the way for developing low cost, flexible, and transparent graphene sensors on plastic. We also show that the surface transfer doping mechanism does not have significant influence on the pH sensing response. This highlights that the adsorption of hydroxyl and hydronium ions on the graphene surface due to the charging of the electrical double layer capacitance is responsible for the pH sensing mechanism. Massachusetts Institute of Technology. Institute for Soldier Nanotechnologies United States. Army Research Office International Iberian Nanotechnology Laboratory 2014-05-22T19:48:10Z 2014-05-22T19:48:10Z 2013 2013-07 Article http://purl.org/eprint/type/JournalArticle 00218979 http://hdl.handle.net/1721.1/87110 Mailly-Giacchetti, Benjamin, Allen Hsu, Han Wang, Vincenzo Vinciguerra, Francesco Pappalardo, Luigi Occhipinti, Elio Guidetti, Salvatore Coffa, Jing Kong, and Tomás Palacios. “pH Sensing Properties of Graphene Solution-Gated Field-Effect Transistors.” Journal of Applied Physics 114, no. 8 (2013): 084505. © 2013 AIP. https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X en_US http://dx.doi.org/10.1063/1.4819219 Journal of Applied Physics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics MIT web domain |
| spellingShingle | Mailly-Giacchetti, Benjamin Hsu, Allen Long Wang, Han Vinciguerra, Vincenzo Pappalardo, Francesco Occhipinti, Luigi Guidetti, Elio Coffa, Salvatore Kong, Jing Palacios, Tomas pH sensing properties of graphene solution-gated field-effect transistors |
| title | pH sensing properties of graphene solution-gated field-effect transistors |
| title_full | pH sensing properties of graphene solution-gated field-effect transistors |
| title_fullStr | pH sensing properties of graphene solution-gated field-effect transistors |
| title_full_unstemmed | pH sensing properties of graphene solution-gated field-effect transistors |
| title_short | pH sensing properties of graphene solution-gated field-effect transistors |
| title_sort | ph sensing properties of graphene solution gated field effect transistors |
| url | http://hdl.handle.net/1721.1/87110 https://orcid.org/0000-0003-0551-1208 https://orcid.org/0000-0002-2190-563X |
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