Visible and Infra-red Light Emission in Boron-Doped Wurtzite Silicon Nanowires
Silicon, the mainstay semiconductor in microelectronic circuitry, is considered unsuitable for optoelectronic applications owing to its indirect electronic band gap, which limits its efficiency as a light emitter. Here we show the light emission properties of boron-doped wurtzite silicon nanowires m...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Nature Publishing Group
2014
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| Online Access: | http://hdl.handle.net/1721.1/87588 |